Method for manufacturing a solar cell

1. A method for manufacturing a solar cell, wherein the solar cell comprises a dopant layer having a first portion of a first resistance and a second portion of a second resistance lower than the first resistance, the method comprising:

ion-implanting a dopant into a semiconductor substrate to form the dopant layer;

first, activating by heating the second portion to activate dopant inside the dopant layer at the second portion without supplying additional dopant; and

second, activating by heating the first portion and the second portion to activate the dopant at the first portion and the second portion, after the first activating,

wherein the dopant layer comprises an emitter layer at a front surface of the semiconductor substrate and a back surface field layer at a back surface of the semiconductor substrate,

wherein the dopant comprises a first dopant of a first conductivity type and a second dopant of a second conductivity type,

wherein the emitter layer is doped with the first dopant and the back surface field layer is doped with the second dopant,

wherein each of the emitter layer and the back surface field layer comprises the first portion and the second portion,

wherein, during the first activating, the second portion of the emitter layer and the second portion of the back surface field layer are heated, and

wherein during the second activating, the first portion and the second portion of the emitter layer and the first portion and the second portion of the back surface field layer are heated.

2. The method according to claim 1 , wherein the ion-implanting comprises:

implanting a dose of the dopant into the first portion of one of the emitter layer and the back surface field layer and a dose of the dopant into the second portion of the one of the emitter layer and the back surface field layer; and

in the first activating, activating the dopant at the second portion of the one of the emitter layer and the back surface field layer so that the second portion of the one of the emitter layer and the back surface field layer has the second resistance lower than the first resistance of the first portion of the one of the emitter layer and the back surface field layer.

3. The method according to claim 1 , wherein the first activating comprises irradiating the second portion with a laser.

4. The method according to claim 1 , wherein the dopant of the dopant layer comprises boron (B), and in the ion-implanting, implanting boron with a dose about 2˜4×10 15 /cm 2 by using an energy of about 5˜20keV.

5. The method according to claim 1 , wherein the dopant of the dopant layer comprises phosphorus (P), and

in the ion-implanting, implanting phosphorus with a dose about 3˜8×10 15 /cm 2 by using an energy of about 10˜50keV.

6. The method according to claim 1 , wherein the first activating comprises heating the second portion to a temperature of about 1000˜1500° C.

7. The method according to claim 2 , wherein, in the first activating, a laser used in the step comprises a Nd-YVO 4 laser.

8. The method according to claim 1 , further comprising forming a passivation film for covering one surface of the semiconductor substrate where the dopant is implanted, between the ion-implanting and the first activating.

9. The method according to claim 8 , wherein the first activating comprises irradiating by a laser one surface of the semiconductor substrate where the passivation film is formed.

10. The method according to claim 9 , wherein the first activating comprises forming an opening by the laser at a portion of the passivation film corresponding to the second portion.

11. The method according to claim 10 , further comprising forming an electrode electrically connected to the second portion through the opening, after the second activating.

12. The method according to claim 1 , wherein the dopant layer comprises at least one of an emitter layer and a back surface field layer.

13. The method according to claim 1 , wherein the dopant of the dopant layer comprises boron, and

during the second activating, heating the first portion and the second portion to a temperature of about 950˜1300° C.

14. The method according to claim 1 , wherein the dopant of the dopant layer comprises phosphorus, and

during the second activating, heating the first portion and the second portion to a temperature of about 800˜950° C.

15. The method according to claim 1 , wherein the second activating is performed in a heat-treating furnace.

16. The method according to claim 1 ,

wherein each of the emitter layer and the back surface field layer comprises the first portion and the second portion,

wherein, the first activating comprises irradiating by lasers to the front and the back surfaces of the semiconductor substrate to heat the second portion of the emitter layer and the second portion of the back surface field layer, and

wherein, during the second activating, heating the semiconductor substrate to simultaneously heat the first portion and the second portion of the emitter layer and the back surface field layer.

17. The method according to claim 16 , wherein the first activating comprises irradiating by lasers to the front and the back surfaces of the semiconductor substrate to simultaneously heat the second portion of the emitter layer and the second portion of the back surface field layer.

18. The method according to claim 16 , wherein the first activating comprises heating the second portion of the emitter layer and the second portion of the back surface field layer to a temperature of about 1000˜1500° C.

19. The method according to claim 16 , wherein the second activating comprises heating the first portion and the second portion to a temperature of about 950˜1300° C.

20. The method according to claim 16 , wherein if one of the emitter layer and the back surface field layer is doped with boron, the remaining of the emitter layer and the back surface field layer is doped with phosphorus, and

wherein the ion-implanting comprises implanting boron with a dose about 2˜4×10 15 /cm 2 by using an energy of about 5˜20keV, and implanting phosphorus with a dose about 3˜8×10 15 /cm 2 by using an energy of about 10˜50keV.