IGBT and diode
In an IGBT, defects generated by ion implantation for introduction of the P-type collector region or N-type buffer region into the N − -type drift region near the N-type buffer region remain to improve the switching speed, however the leak current increases by bringing a depletion layer into contact with the crystal defects at the off time. To avoid this, an IGBT is provided which includes an N-type buffer region having a higher concentration than that of an N − -type drift region and being in contact with a P-type on its backside, and a defect remaining region provided near the boundary between the N-type buffer region and the N − -type drift region. The N − -type drift region located on the front surface side with respect to the defect remaining region is provided with an N-type field stopping region having a higher concentration than that of the N − -type drift region.
1. An IGBT, comprising:
(a) a semiconductor substrate having a first main surface and a second main surface,
(b) a drift region of a first conductive type occupying a main part of the semiconductor substrate;
(c) a channel region of a second conductive type opposite to the first conductive type, provided at a front surface region on the first main surface side of the drift region;
(d) an emitter region of the first conductive type provided at a front surface region on the first main surface side of the channel region;
(e) a collector region of the second conductive type provided at the second main surface side of the drift region;
(f) a buffer region of the first conductive type provided along an inner side of the collector region and in contact with the collector region, said buffer region having a higher concentration than that of the drift region;
(g) a crystal defect region provided between the buffer region and the drift region; and
(h) a field stopping region of the first conductive type provided between the crystal defect region and the drift region, said field stopping region having a higher concentration than that of the drift region,
wherein the buffer region is provided between the collector region and the crystal defect region.
2. The IGBT according to claim 1 , wherein the semiconductor substrate is a single crystal silicon substrate.
3. The IGBT according to claim 2 , wherein the single crystal silicon substrate is formed by a FZ method.
4. The IGBT according to claim 3 , wherein the field stopping region is formed by ion-implanting hydrogen ions or helium ions.
5. The IGBT according to claim 2 , wherein the IGBT is of a trench gate type.
6. The IGBT according to claim 5 , wherein the IGBT is an IE-type trench gate IGBT.
7. The IGBT according to claim 2 , further comprising:
(i) a metal collector electrode provided over the second main surface of the semiconductor substrate; and
(j) a high-concentration collector contact region provided at the collector region on the metal collector electrode side, said collector contact region having the same conductive type as that of the collector region, and a higher impurity concentration than that of the collector region,
wherein the high-concentration collector contact region is a region doped with aluminum.
8. The IGBT according to claim 7 , wherein a part of the metal collector electrode in contact with the high-concentration collector contact region is a metal film containing aluminum as a principal component.
9. A diode comprising:
(a) a semiconductor substrate having a first main surface and a second main surface,
(b) a drift region of a first conductive type occupying a main part of the semiconductor substrate;
(c) an anode metal electrode provided over the first main surface of the semiconductor substrate;
(d) a cathode region of the first conductive type provided at the second main surface side of the drift region, said cathode region having a higher concentration than that of the drift region;
(e) a crystal defect region provided along an inner side of the cathode region, and between the cathode region and the drift region; and
(f) a field stopping region of the first conductive type provided along an inner side of the crystal defect region, and between the drift region and the crystal defect region, said field stopping region having a higher concentration than that of the drift region.
10. The diode according to claim 9 , wherein the semiconductor substrate is a single crystal silicon substrate.
11. The diode according to claim 10 , wherein the single crystal silicon substrate is formed by a FZ method.
12. The diode according to claim 11 , wherein the field stopping region is formed by ion-implanting hydrogen ions or helium ions.