Anti-reflective coating with high optical absorption layer for backside contact solar cells
View Patent ↗A multilayer anti-reflection structure for a backside contact solar cell. The anti-reflection structure may be formed on a front side of the backside contact solar cell. The anti-reflection structure may include a passivation level, a high optical absorption layer over the passivation level, and a low optical absorption layer over the high optical absorption layer. The passivation level may include silicon dioxide thermally grown on a textured surface of the solar cell substrate, which may be an N-type silicon substrate. The high optical absorption layer may be configured to block at least 10% of UV radiation coming into the substrate. The high optical absorption layer may comprise high-k silicon nitride and the low optical absorption layer may comprise low-k silicon nitride.
1. A method of fabricating a backside contact solar cell, the method comprising:
texturing a surface of a silicon substrate on a front side of a backside contact solar cell to create a textured front side surface, the backside contact solar cell having diffusion regions and metal contacts electrically coupled to the diffusion regions on a backside opposite the front side, the front side facing the sun during normal operation to collect solar radiation;
forming a passivation layer over the textured front side surface; and
forming an anti-reflective structure over the passivation layer, the anti-reflective structure comprising an amorphous silicon layer formed over the passivation layer and a silicon nitride layer formed over the amorphous silicon layer, the amorphous silicon layer being formed between the passivation layer and the silicon nitride layer, wherein the silicon nitride layer has an extinction coefficient of at most 0.03 to light at wavelengths of 400 nm or longer and the amorphous silicon layer is formed to block at least 25% of solar radiation coming in from the front side of the backside contact solar cell.
2. The method of claim 1 wherein the silicon substrate comprises an N-type silicon substrate.
3. The method of claim 1 wherein the passivation layer comprises silicon dioxide.
4. The method of claim 1 wherein the silicon nitride layer is formed to a thickness of 20 nm to 100 nm.
5. The method of claim 1 wherein the passivation layer comprises a thermally grown dielectric.
6. A backside contact solar cell comprising:
a textured surface on a front side of a silicon substrate of a backside contact solar cell, the backside contact solar cell having diffusion regions and metal contacts electrically coupled to the diffusion regions on a back side opposite the front side, the front side facing the sun during normal operation to collect solar radiation;
a passivation layer formed over the textured front side surface of the silicon substrate;
an amorphous silicon layer formed over the passivation layer;
a low optical absorption silicon nitride layer formed over the amorphous silicon layer, the low optical absorption silicon nitride layer forming a multi-layer anti-reflection structure with the amorphous silicon layer and the passivation layer; and
the amorphous silicon layer being formed between the passivation layer and the silicon nitride layer, wherein the silicon nitride layer has an extinction coefficient of at most 0.03 to light at wavelengths of 400 nm or longer and the amorphous silicon layer is formed to block at least 25% of solar radiation coming in from the front side of the backside contact solar cell.
7. The backside contact solar cell of claim 6 wherein the passivation layer comprises silicon dioxide.
8. The backside contact solar cell of claim 6 wherein the substrate comprises an N-type silicon substrate.
9. A backside contact solar cell comprising:
a textured surface on a front side of a silicon substrate of a backside contact solar cell, the backside contact solar cell having diffusion regions and metal contacts electrically coupled to the diffusion regions on a back side opposite the front side, the front side facing the sun during normal operation to collect solar radiation;
a passivation layer formed over the textured front side surface of the silicon substrate;
an amorphous silicon layer formed over the passivation layer;
a low optical absorption silicon nitride layer formed over the amorphous silicon layer, the low optical absorption silicon nitride layer forming a multi-layer anti-reflection structure with the amorphous silicon layer and the passivation layer; and
the amorphous silicon layer being formed between the passivation layer and the silicon nitride layer, wherein the silicon nitride layer has an extinction coefficient of at most 0.03 to light at wavelengths of 400 nm or longer and the amorphous silicon layer is formed to block at least 25% of solar radiation coming in from the front side of the backside contact solar cell;
wherein the passivation layer comprises silicon dioxide.
10. The backside contact solar cell of claim 9 wherein the silicon substrate comprises N-type silicon.