Method of manufacturing semiconductor device
Disclosed herein is a method of manufacturing a semiconductor device. The method comprises forming a first silicon film on a semiconductor substrate, forming a second silicon film on the first silicon film, forming a third silicon film on the second silicon film, and forming a first diffusion barrier film on the third silicon film. The method further comprises performing a thermal treatment to diffuse an impurity included in the second silicon film into at least the first silicon film and the semiconductor substrate, respectively.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a first silicon film over a semiconductor substrate;
forming a second silicon film on the first silicon film;
forming a third silicon film on the second silicon film;
forming a first diffusion barrier film on the third silicon film; and
performing a thermal treatment to diffuse an impurity included in the second silicon film into at least the first silicon film and the semiconductor substrate, respectively.
2. The method as recited in claim 1 , wherein each of the first silicon film, the second silicon film, and the third silicon film is deposited in one of an amorphous state and a polycrystalline state.
3. The method as recited in claim 2 , wherein the impurity comprises arsenic.
4. The method as recited in claim 1 , wherein the first silicon film and the second silicon film are formed by selective epitaxial growth.
5. The method as recited in claim 4 , wherein the impurity comprises arsenic.
6. A method of manufacturing a semiconductor device, the method comprising:
forming a plurality of semiconductor pillars protruding vertical to a surface of a semiconductor substrate;
forming an insulator film that covers side surfaces of grooves sandwiched between the plurality of semiconductor pillars;
forming a first silicon film that covers inner surfaces of the grooves;
forming, on the first silicon film, a second silicon film including an impurity that is diffused to the semiconductor substrate;
forming a third silicon film on the second silicon film;
forming, on the third silicon film, a first diffusion barrier film for preventing outer diffusion of the impurity; and
forming diffusion layers by thermally diffusing the impurity from the second silicon film into the semiconductor pillars at regions of bottoms of the grooves.
7. The method as recited in claim 6 , wherein the diffusion layer is formed as a buried bit line below a channel region in a direction of which the grooves extend.
8. The method as recited in claim 6 , further comprising forming a doped layer by diffusing the impurity into the first silicon film and into the third silicon film after the forming of the first diffusion barrier film,
wherein the forming the diffusion layer comprises thermally diffusing the impurity from the doped layer into the semiconductor pillars at regions corresponding to the bottoms of the grooves.
9. The method as recited in claim 8 , wherein the first silicon film is formed so that the grooves are filled with the first silicon film.
10. The method as recited in claim 8 , wherein the first diffusion barrier film is formed so that the grooves are filled with the first diffusion barrier film.
11. The method as recited in claim 8 , wherein the third silicon film is formed in thickness thicker than the first silicon film.
12. The method as recited in claim 8 , further comprising forming a fourth silicon film on the first diffusion barrier film.
13. The method as recited in claim 12 , further comprising forming a second diffusion barrier film on the fourth silicon film.
14. The method as recited in claim 13 , further comprising forming a fifth silicon film on the second diffusion barrier film.
15. The method as recited in claim 8 , wherein the second silicon film including the impurity is formed by adsorbing the impurity on the first silicon film.
16. The method as recited in claim 8 , wherein the impurity comprises arsenic.
17. A method of manufacturing a semiconductor device, the method comprising:
forming first and second semiconductor fences protruding to a surface of a semiconductor substrate;
forming an insulator film that covers a side surface of a groove sandwiched between the first and second semiconductor fences;
forming a first silicon film that covers an inner surface of the groove;
forming a second silicon film including an impurity on the first silicon film;
forming a third silicon film on the second silicon film;
forming, on the third silicon film, a first diffusion barrier film for preventing outer diffusion of the impurity; and
forming a diffusion layer by thermally diffusing the impurity from the second silicon film into the first and second semiconductor fences at a bottom part of the groove.
18. The method as recited in claim 17 , further comprising:
removing the first diffusion barrier film, the third silicon film, the second silicon film and the first silicon film;
etching the diffusion layer at the bottom part of the groove so that the diffusion layer in the first and second semiconductor fences are left thereafter;
etching the semiconductor substrate at the bottom of the groove;
forming an insulator to fill the groove; and
forming a plurality of semiconductor pillars by dividing the first and second semiconductor fences, wherein the first and second semiconductor fences are divided by etching using a line pattern mask crossing the first and second semiconductor fences.