Solar cell and method for manufacturing the same
View Patent ↗A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type positioned at the substrate, a first electrode which is positioned on the substrate and is connected to the emitter region, at least one second electrode which is positioned on the substrate and is connected to the substrate, and an aluminum oxide layer positioned on a front surface and a back surface of the substrate excluding areas of the substrate on which the first electrode and the at least one second electrode are formed.
1. A solar cell comprising:
a substrate of a first conductive type;
an emitter region of a second conductive type opposite the first conductive type, the emitter region being positioned at the substrate;
a first electrode which is positioned on the substrate and is connected to the emitter region;
at least one second electrode which is positioned on the substrate and is connected to the substrate;
an aluminum oxide layer having negative fixed charges and positioned on both a front surface and a back surface of the substrate excluding areas of the substrate on which the first electrode and the at least one second electrode are formed; and
an anti-reflection layer formed of silicon nitride having positive fixed charges and positioned on the aluminum oxide layer on the front surface of the substrate,
wherein the aluminum oxide layer on the front surface of the substrate and the aluminum oxide layer on the back surface of the substrate have the same thickness, the same refractive index, the same material, and the same composition,
a thickness of the anti-reflection layer formed of silicon nitride is greater than a thickness of the aluminum oxide layer on the front surface of the substrate, and
a refractive index of the anti-reflection layer formed of silicon nitride is greater than a refractive index of the aluminum oxide layer on the front surface of the substrate.
2. The solar cell of claim 1 , wherein the aluminum oxide layer is additionally positioned on a lateral surface of the substrate which intersects the front surface and a back surface of the substrate.
3. The solar cell of claim 2 , wherein the aluminum oxide layer on the front surface of the substrate, the aluminum oxide layer on the back surface of the substrate, and the aluminum oxide layer on the lateral surface of the substrate have the same thickness, the same refractive index, the same material, and the same composition.
4. The solar cell of claim 1 , wherein the first conductive type of the substrate is a p-type.
5. The solar cell of claim 1 , further comprising a capping layer positioned between the aluminum oxide layer on the back surface of the substrate and the at least one second electrode.
6. The solar cell of claim 5 , wherein the capping layer is formed of silicon nitride or silicon oxide.
7. The solar cell of claim 6 , further comprising a plurality of surface field regions which are locally positioned at the back surface of the substrate and are separated from one another,
wherein the at least one second electrode is one second electrode including a plurality of contact portions abutting the plurality of surface field regions, and
wherein the one second electrode is connected to the substrate through the plurality of contact portions.
8. The solar cell of claim 7 , wherein the aluminum oxide layer has a thickness of about 10 nm to 30 nm.
9. The solar cell of claim 7 , wherein the first electrode is positioned on the front surface of the substrate, and the one second electrode is positioned on the back surface of the substrate.
10. The solar cell of claim 1 , further comprising a capping layer positioned between the aluminum oxide layer on the back surface of the substrate and the at least one second electrode.
11. The solar cell of claim 10 , wherein the capping layer is formed of silicon nitride or silicon oxide.
12. The solar cell of claim 11 , wherein when the capping layer is formed of silicon nitride, the capping layer has a thickness of about 50 nm to 100 nm.
13. The solar cell of claim 11 , wherein when the capping layer is formed of silicon oxide, the capping layer has a thickness of about 70 nm to 150 nm.
14. The solar cell of claim 1 , further comprising a plurality of surface field regions which are locally positioned at the back surface of the substrate and are separated from one another,
wherein the at least one second electrode includes a plurality of contact portions abutting the plurality of surface field regions, and
wherein the at least one second electrode is connected to the substrate through the plurality of contact portions.
15. The solar cell of claim 1 , further comprising a plurality of surface field regions locally positioned at the back surface of the substrate,
wherein the first conductive type of the substrate is an n-type, and
wherein the at least one second electrode is a plurality of second electrodes positioned on the plurality of surface field regions.
16. The solar cell of claim 15 , wherein the first electrode is positioned on the front surface of the substrate, and the plurality of second electrodes are positioned on the back surface of the substrate, and
wherein both the front surface and the back surface of the substrate are incident surfaces on which light is incident.
17. The solar cell of claim 1 , wherein the refractive index of the anti-reflection layer formed of silicon nitride is 2.0-2.2 and the refractive index of the aluminum oxide layer on the front surface of the substrate is 1.4-1.6.