IP Library Granted Patent US 8,842,365
Granted Patent B2
US 8,842,365 · App. 13/473,100 · Granted Sep 23, 2014

Phase difference element and method for manufacturing the same

Inventors: Nobuyuki Koike (Miyagi, JP); Masatoshi Sasaki (Miyagi, JP); Naoki Hanashima (Miyagi, JP); Akio Takada (Miyagi, JP); Takatoshi Yamada (Miyagi, JP)
Assignee: Dexerials Corporation
G02B1/115
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Quick Facts
Patent No.
US 8,842,365
App. No.
13/473,100
Granted
Sep 23, 2014
Kind
B2
Abstract

A phase difference element capable of reducing reflection of incident light and a manufacturing method for the phase difference element are disclosed. The phase difference element includes a transparent substrate 11 , an interface anti-reflection film group 12 and an obliquely vapor deposited film 13 . The interface anti-reflection film group is composed by one or more of alternately high and low refractive index films, with the film thicknesses of the respectively films being equal to or less than the wavelength of light in use. The obliquely vapor deposited film is formed by a plurality of layers of a dielectric material. These layers are alternately obliquely vapor deposited from two directions differing by 180° from each other. The refractive index of the interface anti-reflection film group 12 is higher than the refractive index of the transparent substrate 11 and lesser than that of the obliquely vapor deposited film 13.

Claims (27)

1. A phase difference element comprising:

a transparent substrate;

an obliquely vapor deposited multi-layer film formed by a plurality of layers of a dielectric material, the layers of the dielectric material being alternately vapor deposited from two directions differing by 180° from each other, with the thicknesses of the respective layers being not greater than the wavelength of light in use; and

an interface anti-reflection film group composed by one or more of alternately high and low refractive index films stacked between the transparent substrate and the obliquely vapor deposited multi-layer film, the refractive index of the interface anti-reflection film group being higher than the refractive index of the transparent substrate and lower than the refractive index of the obliquely vapor deposited film.

2. The phase difference element of claim 1 , wherein the average refractive index n of the interface anti-reflection film group is represented by the following formula (1):

0< n sub <n <( n oblx +n obly )/2  (1)

where n sub denotes a refractive index of the transparent substrate, and n oblx , n obly , where n oblx >n obly , denote refractive indices of two planer axes x, y of the obliquely vapor deposited film, perpendicular to each other, respectively.

3. The phase difference element of claim 1 , wherein the film of the interface anti-reflection film group in contact with the obliquely vapor deposited film is formed of SiO 2 .

4. The phase difference element of claim 1 , wherein the interface anti-reflection film group is of a three layer structure composed by a low refractive index film, a high refractive index film and a low refractive index film, stacked in this order, with the refractive index of the low refractive index film being less than 1.5 and with the refractive index of the high refractive index film being greater than 2.0.

5. The phase difference element of claim 4 , wherein the refractive indices n oblx , n obly , where n oblx >n obly , of the two planer axes of the obliquely vapor deposited film, perpendicular to each other, both range from 1.55 or more to 1.7 or less, the film thickness of the high refractive index film of the three layer structure ranging from 0.1 or more to 5.5 nm or less.

6. The phase difference element of claim 4 , wherein the film thickness of the interface anti-reflection film group is 90% of the design center wavelength or less.

7. The phase difference element of claim 3 , wherein the film thickness of SiO 2 in contact with the obliquely vapor deposited film is 60 nm or more.

8. The phase difference element of claim 1 , wherein a CVD (Chemical Vapor Deposition) film formed of a dielectric material is formed on the obliquely vapor deposited film.

9. The phase difference element of claim 1 , wherein an anti-reflection film is formed on each of the front and reverse surfaces thereof.

10. The phase difference element of claim 1 , wherein the dielectric material of the obliquely vapor deposited film is an oxide of any of Ta, Zr, Ti, Si, Al, Nb and La either alone or in combination.

11. A method for manufacturing a phase difference element comprising:

alternately depositing one or more of high and low refractive index films on a transparent substrate to form an interface anti-reflection film group the refractive index of which is higher than the refractive index of the transparent substrate and lower than that of the obliquely vapor deposited film; and

alternately obliquely depositing a dielectric material on the interface anti-reflection film group from two directions differing 180° from each other to form a multi-layered obliquely vapor deposited film, with each component layer of the multi-layered obliquely vapor deposited film being of a thickness not greater than the wavelength of light in use.

12. A liquid crystal projector comprising:

a phase difference element arranged between a polarization beam splitter and a liquid crystal cell, the phase difference element comprising:

a transparent substrate;

an obliquely vapor deposited multi-layer film formed by a plurality of layers of a dielectric material, the layers of the dielectric material being alternately vapor deposited from two directions differing by 180° from each other, with the thicknesses of the respective layers being not greater than the wavelength of light in use; and

an interface anti-reflection film group composed by one or more of alternately high and low refractive index films stacked between the transparent substrate and the obliquely vapor deposited multi-layer film, the refractive index of the interface anti-reflection film group being higher than the refractive index of the transparent substrate and lower than the refractive index of the obliquely vapor deposited film.

13. An optical implement carrying thereon a phase difference element comprising:

a transparent substrate;

an obliquely vapor deposited multi-layer film formed by a plurality of layers of a dielectric material, the layers of the dielectric material being alternately vapor deposited from two directions differing by 180° from each other, with the thicknesses of the respective layers being not greater than the wavelength of light in use; and

an interface anti-reflection film group composed by one or more of alternately high and low refractive index films stacked between the transparent substrate and the obliquely vapor deposited multi-layer film, the refractive index of the interface anti-reflection film group being higher than the refractive index of the transparent substrate and lower than the refractive index of the obliquely vapor deposited film.

Assignments (2)
CHANGE OF NAME Recorded Apr 15, 2013
From: SONY CHEMICAL & INFORMATION DEVICE CORPORATION
To: DEXERIALS CORPORATION
Reel/Frame 030219/0679 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 5, 2012
From: KOIKE, NOBUYUKI; SASAKI, MASATOSHI; HANASHIMA, NAOKI; TAKADA, AKIO; YAMADA, TAKATOSHI
To: SONY CHEMICAL & INFORMATION DEVICE CORPORATION
Reel/Frame 028898/0133 →
Priority Claims (1)
JP 2011-109688 · May 16, 2011 · national
Continuity (1)
Related Publication 20120293732A1 · Nov 22, 2012