Semiconductor device and method of manufacturing the same
View Patent ↗A semiconductor device includes: diffusion layers formed at the front surface of a substrate; low-resistance parts formed at the front surfaces of the diffusion layers so as to have resistance lower than the diffusion layer; and rear contact electrodes passing through the substrate from the rear surface of the substrate to be connected to the low-resistance parts through the diffusion layers.
1. A method of manufacturing a semiconductor device, the method comprising the steps of:
forming a gate electrode on a silicon layer of an SOI substrate, in which the silicon layer is formed on a first support substrate through an insulating layer, through a gate insulating film, and forming diffusion layers in the silicon layer on both sides of the gate electrode so as to form a transistor;
forming low-resistance parts having resistance lower than the diffusion layers at the front surfaces of the diffusion layers;
forming a second support substrate on the silicon layer through an insulating film covering the transistor and removing the first support substrate and the insulating layer; and
forming an insulating interlayer on the silicon layer and forming rear contact electrodes in the insulating interlayer and the silicon layer to be connected to the low-resistance parts;
after the gate electrode is formed and before the diffusion layers are formed, forming sidewalls at the sidewalls of the gate electrode;
forming a first insulating film so as to cover the gate electrode and the sidewalls;
exposing the upper parts of the sidewalls;
removing the sidewalls so as to form spaces between the gate electrode and the first insulating film;
forming a second insulating film on the first insulating film while leaving the spaces such that the first insulating film and the second insulating film form the insulating film.
2. A method of manufacturing a semiconductor device, the method comprising:
a step of forming diffusion layers of a conductivity-type at a surface of a semiconductor substrate, a channel region of the semiconductor substrate being between a first one of the diffusion layers and a second one of the diffusion layers;
a step of extending a contact electrode through a first insulating layer and into said semiconductor substrate, said first insulating layer being between said semiconductor substrate and a second insulating film;
a step of placing a first electrically-conductive interconnect within said second insulating film, said contact electrode touching said first one of the diffusion layers and said first electrically-conductive interconnect;
a step of a placing a second electrically-conductive interconnect within an insulating interlayer, an electrode within the insulating interlayer extending from said first electrically-conductive interconnect to said second electrically-conductive interconnect.
3. The method according to claim 2 , further comprising:
a step of forming a first gate electrode on a gate insulating film, said channel region being between said gate insulating film and said first gate electrode.
4. The method according to claim 3 , further comprising:
a step of forming a low-dielectric-constant film on a sidewall of the first gate electrode, a dielectric constant of the low-dielectric-constant film being lower than silicon oxide.
5. The method according to claim 3 , wherein said gate insulating film is a high-dielectric-constant film.
6. The method according to claim 2 , wherein said semiconductor substrate is between said first insulating layer and said insulating interlayer.
7. The method according to claim 2 , wherein said conductivity-type is n-type.
8. The method according to claim 2 , wherein said conductivity-type is p-type.
9. A method of manufacturing a semiconductor device, the method comprising:
a step of forming diffusion layers of a conductivity-type at a surface of a semiconductor substrate, a channel region of the semiconductor substrate being between a first one of the diffusion layers and a second one of the diffusion layers;
a step of extending a contact electrode through a first insulating layer and into said semiconductor substrate, said first insulating layer being between said semiconductor substrate and a second insulating film;
a step of placing a first electrically-conductive interconnect within said second insulating film, said contact electrode touching said first one of the diffusion layers and said first electrically-conductive interconnect;
a step of forming low-resistance parts at said surface of the semiconductor substrate, said contact electrode touching a first one of the low-resistance parts.
10. The method according to claim 9 , wherein said first one of the low-resistance parts is within said first one of the diffusion layers.
11. The method according to claim 9 , wherein said first one of low-resistance parts has an electrical resistance lower than said first one of diffusion layers.
12. The method according to claim 9 , wherein said first one of low-resistance parts a silicide.
13. The method according to claim 9 , wherein a portion of the contact electrode is said first one of the low-resistance parts.
14. The method according to claim 9 , wherein said channel region is between a first one of the low-resistance parts and a second one of the low-resistance parts.
15. The method according to claim 14 , wherein said second one of the low-resistance parts is within said second one of the diffusion layers.
16. A method of manufacturing a semiconductor device, the method comprising:
a step of forming diffusion layers of a conductivity-type at a surface of a semiconductor substrate, a channel region of the semiconductor substrate being between a first one of the diffusion layers and a second one of the diffusion layers;
a step of extending a contact electrode through a first insulating layer and into said semiconductor substrate, said first insulating layer being between said semiconductor substrate and a second insulating film;
a step of placing a first electrically-conductive interconnect within said second insulating film, said contact electrode touching said first one of the diffusion layers and said first electrically-conductive interconnect;
a step of forming a first gate electrode on a gate insulating film, said channel region being between said gate insulating film and said first gate electrode;
a step of forming a second gate electrode on an element isolation area, said contact electrode extending to said second gate electrode through said semiconductor substrate and said element isolation area.
17. The method according to claim 16 , wherein said element isolation area is within said semiconductor substrate.
18. The method according to claim 16 , wherein said element isolation area is an insulator.