Carbonaceous nanomaterial-based thin-film transistors
View Patent ↗Disclosed are thin film transistor devices incorporating a thin film semiconductor derived from carbonaceous nanomaterials and a dielectric layer composed of an organic-inorganic hybrid self-assembled multilayer.
1. A thin film transistor comprising:
a thin film semiconductor comprising carbonaceous nanomaterials;
an organic-inorganic hybrid multilayer dielectric material comprising an inorganic oxide primer layer and one or more bilayers deposited thereon, wherein each bilayer comprises a π-polarizable layer and an inorganic oxide capping layer;
a gate electrode in contact with the hybrid multilayer dielectric material; and
source and drain electrodes in contact with the thin film semiconductor;
wherein the inorganic oxide primer layer is coupled to the π-polarizable layer of one of the bilayers via phosphonate bonds, and the inorganic oxide capping layer in each bilayer is coupled to the π-polarizable layer via bonds other than phosphonate bonds.
2. The thin film transistor of claim 1 , wherein the hybrid multilayer comprises two or more bilayers, and wherein the π-polarizable layer of a bilayer is coupled to the inorganic oxide capping layer of an underlying bilayer via phosphonate bonds.
3. The thin film transistor of claim 1 , wherein the π-polarizable layer comprises one or more π-polarizable compounds, and each π-polarizable compound comprises a non-linear optical chromophore.
4. The thin film transistor of claim 1 , wherein the π-polarizable layer comprises one or more π-polarizable compounds selected from:
wherein n is an integer between 1 and 20.
5. The thin film transistor of claim 1 , wherein the carbonaceous nanomaterials are selected from single-walled nanotubes (SWCNTs), multiwalled nanotubes (MWCNTs), graphene, graphene oxides, graphite sheets, and carbon nanodots.
6. A thin film transistor comprising:
a thin film semiconductor comprising carbonaceous nanomaterials;
an organic-inorganic hybrid multilayer dielectric material comprising an inorganic oxide primer layer and one or more bilayers deposited thereon, wherein each bilayer comprises a π-polarizable layer and an inorganic oxide capping layer;
a gate electrode in contact with the hybrid multilayer dielectric material;
source and drain electrodes in contact with the thin film semiconductor; and
an interlayer between the hybrid multilayer dielectric material and the thin film semiconductor, wherein the interlayer comprises a self-assembled monolayer comprising n-alkylphosphonic acid.
7. The thin film transistor of claim 6 , wherein the carbonaceous nanomaterials are selected from single-walled nanotubes (SWCNTs), multiwalled nanotubes (MWCNTs), graphene, graphene oxides, graphite sheets, and carbon nanodots.
8. The thin film transistor of claim 6 , wherein the n-alkylphosphonic acid comprises at least 6 carbon atoms.
9. A method of fabricating a thin film transistor, the method comprising:
assembling an organic-inorganic hybrid multilayer dielectric material by performing one or more times the steps of (a) coupling a π-polarizable layer to a first inorganic oxide layer, and (b) coupling a second inorganic oxide layer to the π-polarizable layer; and
depositing a thin film semiconductor either directly adjacent to the organic-inorganic hybrid multilayer dielectric material or indirectly adjacent to the organic-inorganic hybrid multilayer dielectric material via an interlayer, wherein the thin film semiconductor is deposited from a dispersion comprising carbonaceous nanomaterials, and wherein depositing the thin film semiconductor comprises using a solution-phase method.
10. The method of claim 9 , wherein the carbonaceous nanomaterials are selected from single-walled nanotubes (SWCNTs), multiwalled nanotubes (MWCNTs), graphene, graphene oxides, graphite sheets, and carbon nanodots.
11. The method of claim 9 , wherein assembling the organic-inorganic hybrid multilayer dielectric material comprises performing one or more times the steps of (a) coupling a π-polarizable layer to a first zirconia layer, and (b) coupling a second zirconia layer to the π-polarizable layer.
12. The method of claim 11 , wherein coupling the second zirconia layer to the π-polarizable layer comprises contacting the π-polarizable layer with a zirconia sol.
13. The method of claim 12 , wherein the zirconia sol comprises a zirconium compound in an alcohol solvent or a solvent mixture comprising an alcohol.
14. The method of claim 13 , wherein the zirconium compound is selected from ZrCl 4 , ZrOCl 2 , and Zr(OR) 4 , wherein each R independently is a C 1-6 alkyl group.
15. The method of claim 14 , wherein the zirconia sol comprises a hydrolyzing catalyst.
16. The method of claim 11 , wherein coupling the second zirconia layer to the π-polarizable layer comprises spin-coating a zirconia sol on the π-polarizable layer and annealing at a temperature between about 100° C. and about 400° C.
17. The method of claim 9 , comprising assembling a monolayer between the organic-inorganic hybrid multilayer dielectric material and the thin film semiconductor.
18. The method of claim 17 , wherein assembling the monolayer comprises contacting the organic-inorganic hybrid multilayer dielectric material with a solution comprising an n-alkylphosphonic acid.