IP Library Granted Patent US 8,658,271
Granted Patent B2
US 8,658,271 · App. 13/482,944 · Granted Feb 25, 2014

Supporting membranes on nanometer-scale self-assembled films

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Quick Facts
Patent No.
US 8,658,271
App. No.
13/482,944
Granted
Feb 25, 2014
Kind
B2
Abstract

Block copolymer lithography has emerged as an alternative lithographic method to achieve large-area, high-density patterns at resolutions near or beyond the limit of conventional lithographic techniques for the formation of bit patterned media and discrete track media. In one embodiment, a structure includes a plurality of nanostructures extending upwardly from a substrate and a porous membrane extending across upper ends of the plurality of nanostructures. Other systems and methods are disclosed as well.

Claims (26)

1. A structure, comprising:

a plurality of lamellae-shaped nanostructures extending upwardly from a substrate;

a porous membrane extending across upper ends of the plurality of nanostructures; and

a non-porous film above the porous membrane, the non-porous film being a continuous film extending along all portions of the porous membrane for preventing material from passing through the porous membrane.

2. The structure as recited in claim 1 , wherein the nanostructures are oriented in a nonrandom pattern.

3. The structure as recited in claim 1 , further comprising a plurality of second nanostructures formed above the non-porous film, and a second porous membrane extending across upper ends of the plurality of second nanostructures.

4. The structure as recited in claim 3 , further comprising a plurality of third nanostructures formed above the second porous membrane, and a third porous membrane extending across upper ends of the plurality of third nanostructures.

5. The structure as recited in claim 1 , wherein an average width of the nanostructures is less than about 50 nm in a critical dimension thereof, wherein an average pitch of the plurality of nanostructures is within about 1.5 to about 3 times the average width in the critical dimension.

6. The structure as recited in claim 1 , wherein the nanostructures have an aspect ratio of thickness to width in a critical dimension of between about 0.5:1 and about 5:1.

7. The structure as recited in claim 1 , wherein the nanostructures are comprised of a block polymer film.

8. The structure as recited in claim 3 , further comprising a surface modification layer between the non-porous film and the second nano structures.

9. The structure as recited in claim 8 , further comprising an etch stop layer positioned between the substrate and the lamellae-shaped nanostructures.

10. The structure as recited in claim 1 , further comprising an etch stop layer positioned between the substrate and the nanostructures.

11. A structure, comprising:

a plurality of nanostructures extending upwardly from a substrate;

a porous membrane extending across upper ends of the plurality of nanostructures; and

a non-porous film above the porous membrane, the non-porous film being a continuous film extending along all portions of the porous membrane for preventing material from passing through the porous membrane.

12. The structure as recited in claim 11 , further comprising a plurality of second nanostructures formed above the non-porous film, and a second porous membrane extending across upper ends of the plurality of second nanostructures.

13. The structure as recited in claim 12 , further comprising a surface modification layer between the non-porous film and the second nanostructures.

14. The structure as recited in claim 12 , wherein the first and second nanostructures are lamellar-shaped, wherein longitudinal axes of the second nanostructures are oriented about perpendicular to longitudinal axes of the first nanostructures.

15. The structure as recited in claim 11 , further comprising an etch stop layer positioned between the substrate and the nanostructures.

16. The structure as recited in claim 11 , wherein an average width of the nanostructures is less than about 50 nm in a critical dimension thereof, wherein an average pitch of the plurality of nanostructures is within about 1.5 to about 3 times the average width in the critical dimension.

17. The structure as recited in claim 11 , wherein the nanostructures have an aspect ratio of thickness to width in a critical dimension of between about 0.5:1 and about 5:1.

18. The structure as recited in claim 11 , wherein the nanostructures are lamellae.

19. The structure as recited in claim 3 , wherein the second nanostructures are lamellar-shaped, wherein longitudinal axes of the second nanostructures are oriented about perpendicular to longitudinal axes of the first nanostructures.

20. The structure as recited in claim 9 , wherein the second nanostructures are lamellar-shaped, wherein longitudinal axes of the second nanostructures are oriented about perpendicular to longitudinal axes of the first nanostructures.

Assignments (7)
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
RELEASE OF SECURITY INTEREST AT REEL 052915 FRAME 0566 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 059127/0001 →
SECURITY INTEREST Recorded Feb 6, 2020
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS AGENT
Reel/Frame 052915/0566 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 6, 2016
From: HGST NETHERLANDS B.V.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 040826/0327 →
CHANGE OF NAME Recorded Oct 25, 2012
From: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
To: HGST NETHERLANDS B.V.
Reel/Frame 029341/0777 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 14, 2012
From: BOSWORTH, JOAN K.; DOBISZ, ELIZABETH A.; RUIZ, RICARDO; ROSE DIT ROSE, FRANCK D.
To: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
Reel/Frame 028992/0915 →