Ablation of film stacks in solar cell fabrication processes
View Patent ↗A dielectric film stack of a solar cell is ablated using a laser. The dielectric film stack includes a layer that is absorptive in a wavelength of operation of the laser source. The laser source, which fires laser pulses at a pulse repetition rate, is configured to ablate the film stack to expose an underlying layer of material. The laser source may be configured to fire a burst of two laser pulses or a single temporally asymmetric laser pulse within a single pulse repetition to achieve complete ablation in a single step.
1. A method of fabricating a solar cell, the method comprising:
providing a film stack comprising a first film and a second film, the first film being formed over the second film, the first film comprising silicon, the first film and the second film being over a silicon substrate; and
in a single pulse repetition of a laser source firing at a pulse repetition rate, forming a hole through the first film and the second film.
2. The method of claim 1 wherein the first film comprises silicon nitride.
3. The method of claim 1 wherein a first laser pulse and a second laser pulse are fired within the single pulse repetition, the second laser pulse being fired after a delay time after firing the first laser pulse.
4. The method of claim 3 wherein the first laser pulse has a higher energy than the second laser pulse.
5. The method of claim 3 wherein the first laser pulse forms the hole through the first film and the second film, and the second laser pulse forms the hole through a third film that is between the second film and the silicon substrate.
6. The method of claim 1 wherein the second film comprises an oxide.
7. The method of claim 1 wherein the hole exposes a diffusion region of the solar cell.
8. The method of claim 1 wherein a temporally asymmetric laser pulse having a first peak and a second peak is fired within the single pulse repetition, the first peak having an energy higher than that of the second peak.
9. A method of fabricating a solar cell, the method comprising:
firing one laser pulse within a single repetition of a laser source that is firing laser pulses at a repetition rate, the one laser pulse being temporally asymmetric and having a first peak and a second peak, the first peak occurring first in time relative to the second peak in the single repetition, the first peak having an energy higher than that of the second peak; and
ablating a first film and a second film of a film stack with the one laser pulse within the single repetition, the first film comprising silicon, the film stack being over a silicon substrate.
10. The method of claim 9 wherein the first film comprises silicon nitride.
11. The method of claim 9 further comprising:
ablating a third film of the film stack with the one laser pulse within the single repetition.
12. The method of claim 11 wherein the first peak ablates the first film and the second film.
13. The method of claim 9 wherein the second film comprises an oxide.
14. The method of claim 9 wherein the hole exposes a diffusion region of the solar cell.
15. A method of fabricating a solar cell, the method comprising:
firing laser pulses from a laser source that fires at a pulse repetition rate; and
forming a hole through a first film and a second film of a film stack in a single pulse repetition of the laser source, the first film comprising silicon, the film stack being over a silicon substrate.
16. The method of claim 15 wherein the first film comprises silicon nitride.
17. The method of claim 15 wherein the second film comprises an oxide.
18. The method of claim 15 wherein a first laser pulse and a second laser pulse are fired by the laser source in the single pulse repetition.
19. The method of claim 18 wherein the first laser pulse forms the hole through the first film and the second film.
20. The method of claim 15 wherein the hole exposes a diffusion region of the solar cell.