Polycrystalline diamond, polycrystalline diamond compacts, methods of making same, and applications
View Patent ↗Embodiments of the invention relate to polycrystalline diamond compacts (“PDC”) exhibiting enhanced diamond-to-diamond bonding. In an embodiment, a PDC includes a polycrystalline diamond (“PCD”) table bonded to a substrate. At least a portion of the PCD table includes a plurality of diamond grains defining a plurality of interstitial regions. The plurality of interstitial regions includes a metal-solvent catalyst. The plurality of diamond grains exhibit an average grain size of about 30 μm or less. The plurality of diamond grains and the metal-solvent catalyst collectively exhibit an average electrical conductivity of less than about 1200 S/m. Other embodiments are directed to PCD, employing such PCD, methods of forming PCD and PDCs, and various applications for such PCD and PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.
1. A polycrystalline diamond compact, comprising:
a polycrystalline diamond table exhibiting one or more characteristics of being formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 GPa, at least a portion of the polycrystalline diamond table including:
a plurality of diamond grains defining a plurality of interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 30 μm or less;
a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst is present in the at least a portion of the polycrystalline diamond table in an amount greater than 0 weight % to about 7.5 weight %; and
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit an average electrical conductivity of less than about 1200 S/m;
wherein the polycrystalline diamond table exhibits a G ratio of at least about 4.0×10 6 ; and
a substrate bonded to the polycrystalline diamond table.
2. The polycrystalline diamond compact of claim 1 wherein the at least a portion of the polycrystalline diamond table exhibits a coercivity of about 115 Oe to about 250 Oe.
3. The polycrystalline diamond compact of claim 2 wherein the coercivity is about 130 Oe to about 160 Oe.
4. The polycrystalline diamond compact of claim 2 wherein the at least a portion of the polycrystalline diamond table exhibits a specific magnetic saturation of about 5 G·cm 3 /g to about 15 G·cm 3 /g.
5. The polycrystalline diamond compact of claim 4 wherein the specific magnetic saturation is about 10 G·cm 3 /g to about 15 G·cm 3 /g.
6. The polycrystalline diamond compact of claim 1 wherein the average electrical conductivity is about 25 S/m to about 1000 S/m.
7. The polycrystalline diamond compact of claim 4 wherein the average electrical conductivity is less than about 750 S/m.
8. The polycrystalline diamond compact of claim 7 wherein the at least a portion of the polycrystalline diamond table exhibits a coercivity of about 115 Oe to about 175 Oe.
9. The polycrystalline diamond compact of claim 8 wherein the coercivity is about 130 Oe to about 160 Oe.
10. The polycrystalline diamond compact of claim 7 wherein the at least a portion of the polycrystalline diamond table exhibits a specific magnetic saturation of about 5 G·cm 3 /g to about 15 G·cm 3 /g.
11. The polycrystalline diamond compact of claim 1 wherein the average electrical conductivity is less than about 500 S/m.
12. The polycrystalline diamond compact of claim 11 wherein the at least a portion of the polycrystalline diamond table exhibits a coercivity of about 115 Oe to about 250 Oe.
13. The polycrystalline diamond compact of claim 1 wherein the average electrical conductivity is about 100 S/m to about 500 S/m.
14. The polycrystalline diamond compact of claim 1 wherein the average electrical conductivity is about 50 S/m to about 150 S/m.
15. The polycrystalline diamond compact of claim 1 wherein the average particle size is about 20 μm or less.
16. The polycrystalline diamond compact of claim 15 wherein the average grain size is about 10 μm to about 18 μm.
17. The polycrystalline diamond compact of claim 1 wherein:
the polycrystalline diamond table comprises an upper working surface and an interfacial surface bonded to the substrate; and
the average electrical conductivity of the polycrystalline diamond table decreases with distance from the upper working surface toward the substrate.
18. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table comprises:
a first layer adjacent to the substrate including coarse-sized diamond grains exhibiting a coarse-sized average grain size; and
a second layer including fine-sized diamond grains exhibiting a fine-sized average grain size less than the coarse-sized average grain size, the first layer disposed between the second layer and the substrate.
19. The polycrystalline diamond compact of claim 18 wherein the coarse-sized average grain size of the first layer is greater than about 20 μm, and the fine-sized average grain size of the second layer is less than about 20 μm.
20. The polycrystalline diamond compact of claim 18 wherein the at least a portion of the polycrystalline diamond exhibits a coercivity of about 130 Oe to about 160 Oe and a specific magnetic saturation of about 10 G·cm 3 /g to about 15 G·cm 3 /g.
21. The polycrystalline diamond compact of claim 20 wherein the polycrystalline diamond table includes a leached region from which at least some of the metal-solvent catalyst is depleted.