Compression and cold weld sealing method for an electrical via connection
View Patent ↗Compression cold welding methods, joint structures, and hermetically sealed containment devices are provided. The method includes providing a first substrate having at least one first joint structure which comprises a first joining surface, which surface comprises a first metal; providing a second substrate having at least one second joint structure which comprises a second joining surface, which surface comprises a second metal; and compressing together the at least one first joint structure and the at least one second joint structure to locally deform and shear the joining surfaces at one or more interfaces in an amount effective to form a metal-to-metal bond between the first metal and second metal of the joining surfaces. Overlaps at the joining surfaces are effective to displace surface contaminants and facilitate intimate contact between the joining surfaces without heat input. Hermetically sealed devices can contain drug formulations, biosensors, or MEMS devices.
1. A method of forming an electrical via connection comprising:
providing a first non-conductive substrate having an aperture therethrough, wherein the interior surface of said first substrate defining said aperture comprises a layer of a first electrically conductive material;
providing a second non-conductive substrate having a projecting member extending from a surface of said second substrate, wherein said projecting member is formed of or coated with a layer of a second electrically conductive material; and
compressing the projecting member of said second substrate into the aperture of said first substrate, to locally plastically deform and shear the first and second electrically conductive materials, in an amount effective to form a cold weld and electrical connection between the first and second electrically conductive materials.
2. The method of claim 1 , further comprising:
before the step of compressing, aligning the projecting member of said second substrate relative to the aperture of said first substrate so as to impart one or more overlaps of the projecting member relative to the aperture.
3. The method of claim 2 , wherein the step of compressing comprises locally deforming and shearing the projecting member at one or more interfaces created by the one or more overlaps in an amount effective to plastically deform at least a portion of the projecting member into a space between the first substrate and the second substrate outside the aperture.
4. The method of claim 1 , wherein the first non-conductive substrate, the second non-conductive substrate, or both first and second non-conductive substrates comprise silicon.
5. The method of claim 4 , wherein the first electrically conductive material, the second electrically conductive material, or both electrically conductive materials comprise gold, indium, aluminum, copper, lead, zinc, nickel, silver, palladium, cadmium, titanium, tungsten, tin, and combinations thereof.
6. The method of claim 2 , wherein the one or more overlaps have a width of between 1 μm and 50 μm.
7. The method of claim 1 , wherein the projecting member is cylindrical.
8. The method of claim 1 , wherein the first non-conductive substrate is rigid.
9. The method of claim 8 , wherein the first non-conductive substrate comprises silicon.
10. A method of forming an electrical via connection comprising:
providing a first non-conductive substrate having an aperture therethrough, wherein the interior surface of said first substrate defining said aperture comprises a layer of a first electrically conductive material;
providing a second non-conductive substrate having a projecting member extending from a surface of said second substrate, wherein said projecting member is formed of or coated with a layer of a second electrically conductive material; and
compressing the projecting member of said second substrate into the aperture of said first substrate, to locally plastically deform and shear the first and second electrically conductive materials, in an amount effective to form a hermetic cold weld and electrical connection between the first and second electrically conductive materials.
11. The method of claim 1 , wherein the first and second electrically conductive materials are gold.
12. The method of claim 10 , wherein the first and second electrically conductive materials are gold.