Heater assembly for crystal growth apparatus
View Patent ↗Systems and methods are provided to promote uniform thermal environment to feedstock material (e.g., silicon) in a crucible of a crystal growth apparatus are provided herein. More specifically, a heating system may be arranged in the crystal growth apparatus so as to include at least a first and second heating element which are configured to distribute heat axisymmetrically to the feedstock material and the second heating element that is configured to distribute heat symmetrically to the feedstock material to thereby provide uniform heat distribution to the feedstock material in the crucible to allow for increased consistency in crystal ingot quality.
1. A crystal growth apparatus, comprising:
a feedstock material received in a crucible having a cuboid shape, the crucible arranged in the crystal growth apparatus; and
a heating system arranged in the crystal growth apparatus, the heating system comprising at least a first heating element and a second heating element, the first heating element being circular and configured to distribute heat axisymmetrically to the feedstock material and the second heating element being square-shaped and configured to distribute heat symmetrically to the feedstock material, wherein the circular first heating element is arranged above the cuboidal crucible and the square-shaped second heating element is arranged along all sides of the cuboidal crucible.
2. The crystal growth apparatus of claim 1 , wherein the first heating element is formed out of a single piece of material.
3. The crystal growth apparatus of claim 1 , wherein the second heating element is formed in a serpentine shape.
4. The crystal growth apparatus of claim 1 , wherein the first heating element and the second element are independently controlled by a controller connected to electrodes mounted and connected to the first and second heating elements of the crystal growth apparatus.
5. The crystal growth apparatus of claim 4 , wherein the first heating element and the second heating element are connected to and are operated by a single power supply through a plurality of electrodes.
6. The crystal growth apparatus of claim 4 , wherein current flowing between the first heating element and the second heating element is in a range of 40:60 to 60:40.
7. The crystal growth apparatus of claim 1 , wherein the second heating element is arranged so as to substantially cover the entire height of an ingot in the crucible.
8. A method for heating a feedstock material in a crystal growth apparatus, comprising:
receiving the feedstock material in a crucible having a cuboid shape, the crucible arranged in the crystal growth apparatus; and
operating a heating system, by a controller, to heat and melt the feedstock material in the crucible, the heating system heating the feedstock material via at least a first heating element, the first heating element being circular and distributing heat axisymmetrically to the feedstock material and the second heating element being square shaped and distributing heat symmetrically to the feedstock material,
wherein the circular first heating element is arranged above the cuboidal crucible and the square shaped second heating element is arranged along all sides of the cuboidal crucible.
9. The method of claim 8 , wherein the second heating element is formed in a serpentine shape to distribute heat symmetrically to the feedstock material from each side of the crucible.
10. The method of claim 8 , further comprising operating the first heating element independently of the second heating element.