IP Library Granted Patent US 8,629,061
Granted Patent B2
US 8,629,061 · App. 13/490,460 · Granted Jan 14, 2014

Method for three-dimensional packaging of electronic devices

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Quick Facts
Patent No.
US 8,629,061
App. No.
13/490,460
Granted
Jan 14, 2014
Kind
B2
Abstract

An interposer is fabricated from a lamina. A donor body is provided, ions are implanted into a first surface of the donor body to define a cleave plane, a temporary carrier is separably contacted to the donor body, and the lamina is cleaved from the donor body. The lamina has front surface and a back surface, with a thickness from the front surface to the back surface. A via hole is formed in the lamina, where the via hole extends through the thickness of the lamina. The temporary carrier is removed from the lamina, and the lamina may be fabricated into an interposer for three-dimensional integrated circuit packages.

Claims (26)

1. A method of fabricating an interposer, the method comprising the steps of:

providing a donor body having a first surface;

implanting ions into the first surface of the donor body to define a cleave plane;

separably contacting a first temporary carrier to the first surface of the donor body;

cleaving a lamina from the donor body at the cleave plane, wherein the cleave plane forms a back surface of the lamina, wherein the first surface of the donor body is a front surface of the lamina, and wherein the lamina has a thickness from the front surface to the back surface;

forming a via hole in the lamina, wherein the via hole extends through the thickness of the lamina;

removing the first temporary carrier from the lamina; and

bonding either the front surface or the back surface of the lamina to a second temporary carrier using a de-bondable adhesive;

wherein the step of removing the first temporary carrier occurs after the step of bonding the lamina to the second temporary carrier; and

wherein the step of forming a via hole in the lamina occurs after the step of removing the first temporary carrier.

2. A method of fabricating an interposer, the method comprising the steps of:

providing a donor body having a first surface;

implanting ions into the first surface of the donor body to define a cleave plane;

separably contacting a first temporary carrier to the first surface of the donor body;

cleaving a lamina from the donor body at the cleave plane, wherein the cleave plane forms a back surface of the lamina, wherein the first surface of the donor body is a front surface of the lamina, and wherein the lamina has a thickness from the front surface to the back surface;

forming a via hole in the lamina, wherein the via hole extends through the thickness of the lamina;

removing the first temporary carrier from the lamina; and

fabricating the lamina into a three-dimensional integrated circuit after the step of forming a via hole, wherein the thickness of the cleaved lamina remains substantially unchanged from the step of cleaving to the step of fabricating.

3. The method of claim 2 wherein the thickness of the lamina remains within 20% deviation of its cleaved thickness.

4. A method of fabricating an interposer, the method comprising the steps of:

providing a lamina having a front surface and a back surface, wherein the lamina has a thickness between the front surface and the back surface, and wherein the thickness is between 15 to 40 microns;

contacting a temporary carrier to either the front or the back surface of the lamina;

forming a via hole in the lamina, wherein the via hole, as initially formed, extends through the thickness of the lamina;

removing the temporary carrier from the lamina; and

fabricating the lamina into a three-dimensional integrated circuit after the step of forming a via hole, wherein the thickness of the cleaved lamina remains substantially unchanged between the step of providing a lamina and the step of fabricating the lamina into a three-dimensional integrated circuit.

5. The method of claim 4 wherein the thickness of the lamina remains within 20% deviation of its provided thickness.

Assignments (4)
CHANGE OF NAME Recorded May 16, 2023
From: NEUTRON THERAPEUTICS, INC.
To: NEUTRON THERAPEUTICS LLC
Reel/Frame 063662/0362 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 4, 2015
From: GTAT CORPORATION D/B/A GT ADVANCED TECHNOLOGIES
To: NEUTRON THERAPEUTICS INC.
Reel/Frame 037047/0004 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2012
From: SILICON VALLEY BANK; TWIN CREEKS TECHNOLOGIES, INC.
To: GTAT CORPORATION
Reel/Frame 029275/0076 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2012
From: MURALI, VENKATESAN; CHARI, ARVIND; PRABHU, GOPAL
To: TWIN CREEKS TECHNOLOGIES, INC.
Reel/Frame 028334/0312 →