Method for preparing multilayer of nanocrystals, and organic-inorganic hybrid electroluminescence device comprising multilayer of nanocrystals prepared by the method

1. A method for manufacturing a nanocrystal-polymer thin film comprising:

(i) preparing a photocurable composition comprising a photocurable compound and a semiconductor nanocrystal surface-coordinated with a photosensitive compound; wherein the photocurable compound is selected from a group consisting of allyloxylated cyclohexyl diacrylate, bis(acryloxy ethyl)hydroxyl isocyanurate, bis(acryloxy neopentylglycol) adipate, bisphenol A diacrylate, bisphenyl A dimethacrylate, 1,4-butanediol diacrylate, 1,4-butanediol dimethacrylate, 1,3-butyleneglycol diacrylate, 1,3-butyleneglycol dimethacrylate, dicyclopentanyl diacrylate, diethyleneglycol dimethacrylate, dipentaerythirol hexaacrylate, dipentaerythirol monohydroxy pentacrylate, ditrimethylolpropane tetraacrylate, ethyleneglycol dimethacrylate, glycerol methacrylate, 1,6-hexanediol diacrylate, neopentyiglycol dimethacrylate, neopentyiglycol hydroxypivalate diacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, phosphoric acid dimethacrylate, polypropyleneglycol diacrylate, tetraethyleneglycol diacrylate, tetrabromobisphenol A diacrylate, triethyleneglycol divinylether, triglycerol diacrylate, trimethyloipropane triacrylate, tripropyleneglycol diacrylate, tris(acryloxyethyl)isocyanurate, phosphoric acid triacrylate, phosphoric acid diacrylate, acrylic acid propargyl ester, vinyl terminated potydimethylsiloxane, vinyl terminated diphenylsiloxane-dimethylsiloxane copolymer, vinyl terminated polyphenylmethylsiloxane, vinyl terminated trifluoromethylsiloxane-dimethylsiloxane copolymer, vinyl terminated diethylsiloxane-dimethylsiloxane copolymer, vinylmethylsiloxane, monomethacryloyloxypropyl terminated polydimethyl siloxane, monovinyl terminated polydimethyl siloxane and monoallyl-mono trimethylsiloxy terminated polyethylene oxide;

(ii) applying the photocurable composition to a substrate to form a photocurable composition coating layer;

(iii) treating the photocurable composition coating layer with a mold having a predetermined pattern to form the predetermined pattern on a surface of the photocurable composition coating layer; and

(iv) exposing the photocurable composition coating layer to a light.

2. The method according to claim 1 , wherein the photocurable composition further comprises a solvent, a binder polymer or a photoinitiator.

3. The method according to claim 1 , wherein photosensitive compound coordinating the surface of the nanocrystal is a compound in which a photoreactive functional group such as a carbon-carbon double bond or an acrylic group is selectively bonded to a linker such as cyanide, SH, amine, a carboxyl group and a phosphonic acid group through an alkylene group, an amide group, a phenylene group, a biphenylene group, an ester group, or an ether group.

4. The method according to claim 1 , wherein the method comprises:

repeating the application of the photocurable composition to a substrate to form a photocurable composition coating layer and the exposure of the photocurable composition coating layer, two or more times, to form two or more layers of semiconductor nanocrystal-polymer composite thin films.

5. The method according to claim 4 , further comprising:

laminating the two or more layers of semiconductor nanocrystal-polymer composite thin films.

6. The method according to claim 5 , wherein the lamination of the two or more layers of semiconductor nanocrystal-polymer composite thin films is carried out such that patterns of the thin films overlap at a predetermined angle.

7. The method according to claim 4 , wherein the semiconductor nanocrystals comprised in the two or more layers of semiconductor nanocrystal-polymer composite thin films have different sizes.

8. The method according to claim 1 , wherein the nanocrystals are at least one selected from the group consisting of metal nanocrystals, Group II-VI compound semiconductor nanocrystals, Group III-V compound semiconductor nanocrystals, Group IV-VI compound semiconductor nanocrystals and mixtures thereof.

9. The method according to claim 8 , wherein, when the nanocrystals are a compound of two or more selected from the group consisting of metal nanocrystals, Group II-VI compound semiconductor nanocrystals, Group IV-VI compound semiconductor nanocrystals, and Group III-V compound semiconductor nanocrystals, the nanocrystals are present in the form of a simple mixture, or a fused crystal in which at least two compound crystals are partially present in the same crystal structure, or an alloy.

10. The method according to claim 1 , wherein the exposure is carried out using a light source having an energy of 100 to 800 W at a wavelength of 200 to 500 nm.

11. The method according to claim 1 , wherein the energy for photosensitization treatment upon exposure is 50 mJ/cm 2 to 850 mJ/cm 2 .

12. The method according to claim 1 , wherein the mold has a surface with the predetermined pattern,

wherein the predetermined pattern includes a recessed and/or protruded shape, and

wherein the predetermined pattern has a rectangular shape, a triangular shape, a trapezoidal shape, a cone shape, a prism shape, a pyramid shape or a combination thereof.

13. The method according to claim 1 , wherein the predetermined pattern on the photocurable composition coating layer has a vertical size in a range from about 10 um to about 250 um.

14. The method according to claim 1 , wherein the surface of the photocurable composition coating layer comprises a patterned area and a non-patterned area, and

wherein a ratio of the patterned area to the non-patterned area is in a range from about 0.002 to about 2.