Method of manufacturing semiconductor device including first conductive pattern and second conductive pattern having top surface which decreases in height
View Patent ↗A semiconductor device has a semiconductor substrate, a plurality of first conductive patterns, a second conductive pattern having a top surface of which stepwisely or gradually decreases in height in a direction from a side facing the first conductive pattern toward an opposite side, a first insulation film formed over the plurality of first conductive patterns and the second conductive pattern, and a third conductive pattern formed over the first insulation film.
1. A method of manufacturing a semiconductor device comprising:
forming a first conductive film over a semiconductor substrate;
etching the first conductive film thereby forming a plurality of first conductive patterns provided in a first direction and a second conductive pattern provided in parallel to the plurality of first conductive patterns;
covering the whole of each of the plurality of first conductive patterns and a first part of the second conductive pattern closer to the first conductive pattern with a first mask pattern, while exposing a second part of the second conductive pattern further from the first conductive pattern;
etching the second conductive pattern in a thickness direction with the first mask pattern as a mask so as not to etch the plurality of first conductive patterns and the first part of the second conductive pattern;
forming a first insulation film over the plurality of first conductive patterns and the second conductive pattern; and
forming a third conductive film over the first insulation film.
2. The method according to claim 1 , wherein an end of the first mask pattern is inclined.
3. The method according to claim 1 , wherein etching the first conductive film includes a first etching by which the second conductive pattern is isotropically etched and a second etching by which the second conductive pattern is anisotropically etched.
4. The method according to claim 1 , further comprising:
etching the third conductive film and forming a third conductive pattern extending in the first direction.
5. The method according to claim 4 , further comprising:
forming a sidewall spacer over a sidewall of the third conductive pattern.
6. The method according to claim 5 , further comprising:
forming a metal silicide layer over the third conductive pattern.
7. A method of manufacturing a semiconductor device comprising:
forming a first conductive film over a semiconductor substrate;
etching the first conductive film thereby forming a plurality of first conductive patterns provided in a first direction and a second conductive pattern provided in parallel to the plurality of first conductive patterns;
covering a part of the second conductive pattern closer to the first conductive pattern with a first mask pattern, while exposing a second part of the second conductive pattern further from the first conductive pattern;
etching the second conductive pattern in a thickness direction with the first mask pattern as a mask;
forming a first insulation film over the plurality of first conductive patterns and the second conductive pattern; and
forming a third conductive film over the first insulation film,
wherein etching the first conductive film includes a first etching by which the second conductive pattern is isotropically etched and a second etching by which the second conductive pattern is anisotropically etched.
8. The method according to claim 1 , wherein the plurality of first conductive patterns are provided so as to be adjacent each other and the first mask pattern is provided between the plurality of first conductive patterns.
9. The method according to claim 1 , wherein the first mask pattern is provided between one of the plurality of first conductive patterns and the first part of the second conductive pattern.