Method for selectively forming crystalline silicon layer regions above gate electrodes
View Patent ↗Preparing a substrate; forming a plurality of gate electrodes above the substrate; forming a gate insulating layer above the gate electrodes; forming an amorphous silicon layer above the gate insulating layer; forming crystalline silicon layer regions by irradiating the amorphous silicon layer in regions above the gate electrodes with a laser beam having a wavelength from 473 nm to 561 nm so as to crystallize the amorphous silicon layer in the regions above the gate electrodes, and forming an amorphous silicon layer region in a region other than the regions above the gate electrodes; and forming source electrodes and drain electrodes above the crystalline silicon layer regions are included, and a thickness of the gate insulating layer and a thickness of the amorphous silicon layer satisfy predetermined expressions.
1. A thin-film transistor array manufacturing method comprising:
preparing a substrate;
forming a plurality of gate electrodes above the substrate;
forming a gate insulating layer above the gate electrodes;
forming an amorphous silicon layer above the gate insulating layer;
forming crystalline silicon layer regions by irradiating the amorphous silicon layer in regions above the gate electrodes with a laser beam while relatively moving, in a predetermined direction with respect to the substrate, a laser light source which emits the laser beam having a wavelength from 473 nm to 561 nm so as to crystallize the amorphous silicon layer in the regions above the gate electrodes; and
forming source electrodes and drain electrodes above the crystalline silicon layer regions,
wherein given that X represents a value obtained by dividing an optical film thickness of the amorphous silicon layer by a wavelength of the laser beam, the optical film thickness of the amorphous silicon layer being a value obtained by multiplying a thickness of the amorphous silicon layer formed in the forming the amorphous silicon layer and a refractive index of the amorphous silicon layer, and
Y represents a value obtained by dividing an optical film thickness of the gate insulating layer by the wavelength of the laser beam, the optical film thickness of the gate insulating layer being a value obtained by multiplying a thickness of the gate insulating layer formed in the forming the gate insulating layer and a refractive index of the gate insulating layer,
X and Y are values satisfying a range determined by Expressions 1 to 5, and
given that x represents absorptance (%) of the laser beam by the amorphous silicon layer formed in the forming the amorphous silicon layer, and
y represents a relative value with respect to an energy density of the laser beam, which is defined as 1, necessary for crystallizing the amorphous silicon layer so as to form the crystalline silicon layer regions when the absorptance, for the laser beam, of the amorphous silicon layer formed in the forming the amorphous silicon layer is 23.2(%), and
x and y are value satisfying a range determined by Expressions 6, 7, and 8,
Y≧− 4400 X 6 +12600 X 5 −14900 X 4 +9320 X 3 −3250 X 2 +594 X− 43.7 Expression 1
Y≦ 0.69 Expression 2
Y≧ 0.33 Expression 3
X≦ 0.85 Expression 4
Y≦− 119000 X 6 +529000 X 5 −980000 X 4 +965000 X 3 −533000 X 2 +157000×−19100 Expression 5
20 ≦x≦ 50 Expression 6
y≧ 42.9 x −1.19 Expression 7
y≦− 0.0041 x+ 1.45. Expression 8
2. The thin-film transistor array manufacturing method according to claim 1 ,
wherein, in forming the crystalline silicon layer regions, an amorphous silicon layer region is formed in a region other than the regions above the gate electrodes, and
the amorphous silicon layer region includes microcrystalline silicon.
3. The thin-film transistor array manufacturing method according to claim 2 , wherein the amorphous silicon layer region further includes amorphous silicon.
4. The thin-film transistor array manufacturing method according to claim 1 ,
wherein in forming the crystalline silicon layer regions, an amorphous silicon layer region is formed in a region other than the regions above the gate electrodes, and
the amorphous silicon layer region includes amorphous silicon.
5. The thin-film transistor array manufacturing method according to claim 1 , wherein in forming the crystalline silicon layer regions, the laser light source emits the laser beam in a continuous wave mode or a quasi-continuous wave mode.
6. The thin-film transistor array manufacturing method according to claim 1 , wherein an extinction coefficient of the gate insulating layer formed in the forming the gate insulating layer relative to the wavelength of the laser beam is less than or equal to 0.01.
7. The thin-film transistor array manufacturing method according to claim 1 , wherein the gate insulating layer formed in the forming the gate insulating layer is a silicon oxide film.
8. The thin-film transistor array manufacturing method according to claim 1 , wherein the gate insulating layer formed in the forming the gate insulating layer is a silicon nitride film.
9. A thin-film transistor array comprising:
a substrate:
a plurality of gate electrodes formed above the substrate;
a gate insulating layer formed above the gate electrodes;
a crystalline silicon layer formed above the gate insulating layer in regions corresponding to the gate electrodes; and
source electrodes and drain electrodes formed above the crystalline silicon layer in regions corresponding to the gate electrodes,
wherein, after forming an amorphous silicon layer on the gate insulating layer, the crystalline silicon layer is formed by irradiating the amorphous silicon layer in regions above the gate electrodes with a laser beam while relatively moving, in a predetermined direction with respect to the substrate, a laser light source which emits the laser beam having a wavelength from 473 nm to 561 nm so as to crystallize the amorphous silicon layer in the regions above the gate electrodes,
given that X represents a value obtained by dividing an optical film thickness of the amorphous silicon layer by a wavelength of the laser beam, the optical film thickness of the amorphous silicon layer being a value obtained by multiplying a thickness of the amorphous silicon layer formed in the forming the amorphous silicon layer and a refractive index of the amorphous silicon layer, and
Y represents a value obtained by dividing an optical film thickness of the gate insulating layer by the wavelength of the laser beam, the optical film thickness of the gate insulating layer being a value obtained by multiplying a thickness of the gate insulating layer formed in the forming the gate insulating layer and a refractive index of the gate insulating layer,
X and Y are values satisfying a range determined by Expressions 1 to 5, and
given that x represents absorptance (%) of the laser beam by the amorphous silicon layer formed in the forming the amorphous silicon layer, and
y represents a relative value with respect to an energy density of the laser beam, which is defined as 1, necessary for crystallizing the amorphous silicon layer so as to form the crystalline silicon layer when the absorptance, for the laser beam, of the amorphous silicon layer formed in the forming the amorphous silicon layer is 23.2 (%), and
x and y are value satisfying a range determined by Expressions 6, 7, and 8,
Y≧− 4400 X 6 +12600 X 5 −14900 X 4 +9320 X 3 −3250 X 2 +594 X− 43.7 Expression 1
Y≦ 0.69 Expression 2
Y≧ 0.33 Expression 3
X≦ 0.85 Expression 4
Y≦− 119000 X 6 +529000 X 5 −980000 X 4 +965000 X 3 −533000 X 2 +157000 X− 19100 Expression 5
20 ≦x≦ 50 Expression 6
y≧ 42.9 x −1.19 Expression 7
y≦− 0.0041 x+ 1.45. Expression 8
10. A display device comprising:
a display panel; and
the thin-film transistor array according to claim 9 ,
wherein the thin-film transistor array drives the display panel.