IP Library Granted Patent US 8,525,291
Granted Patent B2
US 8,525,291 · App. 13/495,566 · Granted Sep 3, 2013

Semiconductor device

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Quick Facts
Patent No.
US 8,525,291
App. No.
13/495,566
Granted
Sep 3, 2013
Kind
B2
Abstract

The cell size is reduced and device reliability is improved for a semiconductor device including plural transistors making up a multi-channel output circuit. In a multi-channel circuit configuration, a group of transistors having a common function of plural channels are surrounded by a common trench for insulated isolation from another group of transistors having another function. The collectors of mutually adjacent transistors on the high side are commonly connected to a VH power supply, whereas the emitters of mutually adjacent transistors on the low side are commonly connected to a GND power supply.

Claims (8)

1. A semiconductor device comprising:

a plurality of channels,

wherein a group of elements having a common function of the plurality of channels are enclosed in a common element isolation structure for insulated isolation from another group of elements, the another group of elements having another function and being enclose in another element isolation structure, and

wherein the group of elements is a group of diodes.

2. The semiconductor device according to claim 1 ,

wherein cathode regions of the group of diodes enclosed in the common element isolation structure are connected to common first potential wiring.

3. The semiconductor device according to claim 2 ,

wherein the group of diodes of mutually adjacent channels include a common cathode region.

Assignments (3)
CHANGE OF ADDRESS Recorded Jun 8, 2023
From: ABLIC INC.
To: ABLIC INC.
Reel/Frame 064021/0575 →
CHANGE OF NAME Recorded Mar 12, 2018
From: SII SEMICONDUCTOR CORPORATION
To: ABLIC INC.
Reel/Frame 045567/0927 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 20, 2016
From: HITACHI, LTD.
To: SII SEMICONDUCTOR CORPORATION
Reel/Frame 040683/0027 →