Method for manufacturing semiconductor devices having a glass substrate
A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.
1. A semiconductor device, comprising:
at least two terminals;
a semiconductor substrate comprising a first surface and a second surface, the semiconductor substrate comprising at least one doping region and a metal pad, which is arranged on the first surface;
a first glass substrate comprising at least one opening, the first glass substrate is bonded to the first surface of the semiconductor substrate such that the metal pad is arranged in the opening of the first glass substrate;
a second glass substrate comprising at least one opening, the second glass substrate is bonded to the second surface of the semiconductor substrate;
at least one metallisation region on the second surface of the semiconductor substrate, the metallisation region filling the opening of the second glass substrate.
2. The semiconductor device of claim 1 , wherein the first glass substrate, the second glass substrate and the semiconductor substrate forming a common lateral surface.
3. The semiconductor device of claim 1 , further comprising a carrier substrate comprising at least one bonding pad and a bond wire connection which electrically connects the metal pad on the first surface of the semiconductor substrate with the bonding pad of the carrier substrate.