Ultra-low voltage coefficient capacitors
View Patent ↗A capacitor has first and second conducting plates and a dielectric region between the plates, wherein the dielectric region comprises two dielectric materials for each of which the variation of capacitance with voltage can be approximated by a polynomial having a linear coefficient and a quadratic coefficient, and wherein the quadratic coefficients of the two dielectric materials are of opposite sign. The capacitor comprises for example a first capacitor ( 42 ) and a second capacitor ( 44 ) that one connected in an anti-parallel manner. The insulating layer ( 18 ) of the first capacitor comprises silicon nitride and the insulating layer ( 16 ) of the second capacitor comprises silicon dioxide.
1. A capacitor formed from at least four sub-capacitors connected in parallel with each other, each sub-capacitor having two conducting plates, and a dielectric region therebetween, wherein each sub-capacitor has a variation of capacitance with voltage which can be approximated by a polynomial having a linear coefficient and a quadratic coefficient, said four sub-capacitors comprising a first pair of sub-capacitors each having a first dielectric material with a negative quadratic coefficient and a second pair of sub-capacitors each having a second dielectric material with a positive quadratic coefficient, and wherein the two sub-capacitors of said first pair each have substantially the same linear coefficient and are arranged in anti-parallel so that their linear coefficients substantially cancel each other out.
2. A capacitor as claimed in claim 1 , wherein the two quadratic coefficients of said two dielectric materials cancel each other to within 3 parts per million.
3. A capacitor as claimed in claim 1 , wherein one of said dielectric materials is silicon dioxide.
4. A capacitor as claimed in claim 1 , wherein one of said dielectric materials is silicon nitride.
5. A capacitor as claimed in claim 1 , wherein said conducting plates are formed from at least one of metal or polysilicon.
6. A capacitor as claimed in claim 1 , which comprises a first plurality of pairs of sub-capacitors, each pair having the properties of said first pair of sub-capacitors, and a second plurality of pairs of sub-capacitors, each pair having the properties of said second pair of sub-capacitors, said first plurality being arranged in a first array of sub-capacitors, and said second plurality being arranged in a second array of sub-capacitors.
7. A capacitor as claimed in claim 6 , wherein the sub-capacitors of said first array are arranged in rows and columns, and connected so that the polarity of each sub-capacitor alternates along each row and down each column, so that each sub-capacitor of one polarity has four immediate neighbors of the opposite polarity, and also has four diagonal neighbors of the same polarity.
8. A capacitor as claimed in claim 1 , wherein the two sub-capacitors of said second pair each have substantially the same linear coefficient and are arranged in anti-parallel so that their linear coefficients substantially cancel each other out.
9. A capacitor as claimed in claim 1 , wherein said first pair of sub-capacitors are polysilicon-insulator-polysilicon capacitors.
10. A capacitor as claimed in claim 9 , wherein silicon dioxide is used as an insulator between polysilicon plates of each polysilicon-insulator-polysilicon capacitor.
11. A capacitor as claimed in claim 1 , wherein said second pair of sub-capacitors are metal-insulator-metal capacitors.
12. A capacitor as claimed in claim 11 , wherein silicon nitride is used as an insulator between metal plates of each metal-insulator-metal capacitor.
13. A capacitor as claimed in claim 6 , wherein the sub-capacitors of said second array are arranged in rows and columns, and connected so that the polarity of each sub-capacitor alternates along each row and down each column, so that each sub-capacitor of one polarity has four immediate neighbors of the opposite polarity, and also has four diagonal neighbors of the same polarity.