Semiconductor device
Disclosed is a semiconductor device wherein the adhesion of resin to a substrate is improved at a low cost. A semiconductor element and one or two substrates opposing one or both of the surfaces of the semiconductor element are sealed by a resin, a resin bonding coat which is formed by spraying a metal powder by a cold spray method is formed on one or both of the substrates, and recess portions which are widened from a film surface in a depth direction are formed on the resin bonding coat.
1. A semiconductor device in which a semiconductor element and one or two substrates placed to face one or both surfaces of the semiconductor element are sealingly covered with resin,
wherein the one substrate or the two substrates are formed with a resin bonding coat in such a manner that metal powder is sprayed on the substrate or substrates by a cold spray method, so that the resin bonding coat is formed with a recess having a space being wider in a deep part in a depth direction than in a coat surface part.
2. The semiconductor device according to claim 1 , wherein the recess has a stepped shape.
3. The semiconductor device according to claim 1 , wherein the substrates are a first electrode and a second electrode placed on both surfaces of the semiconductor electrode, and a block electrode is placed between the semiconductor element and the first electrode, the block electrode being formed on the first electrode by the cold spray method.
4. The semiconductor device according to claim 1 , wherein the recess includes a plurality of holes arranged around the semiconductor element and the block electrode.
5. The semiconductor device according to claim 1 , wherein the recess includes a groove surrounding the semiconductor element and the block electrode.
6. The semiconductor device according to claim 1 , wherein the recess includes a groove surrounding the semiconductor element and the block electrode and a rectangular hole overlapping the groove and having a larger dimension than a width of the groove.
7. The semiconductor device according to claim 2 , wherein the substrates are a first electrode and a second electrode placed on both surfaces of the semiconductor electrode, and a block electrode is placed between the semiconductor element and the first electrode, the block electrode being formed on the first electrode by the cold spray method.
8. The semiconductor device according to claim 2 , wherein the recess includes a plurality of holes arranged around the semiconductor element and the block electrode.
9. The semiconductor device according to claim 3 , wherein the recess includes a plurality of holes arranged around the semiconductor element and the block electrode.
10. The semiconductor device according to claim 7 , wherein the recess includes a plurality of holes arranged around the semiconductor element and the block electrode.
11. The semiconductor device according to claim 2 , wherein the recess includes a groove surrounding the semiconductor element and the block electrode.
12. The semiconductor device according to claim 3 , wherein the recess includes a groove surrounding the semiconductor element and the block electrode.
13. The semiconductor device according to claim 4 , wherein the recess includes a groove surrounding the semiconductor element and the block electrode.
14. The semiconductor device according to claim 2 , wherein the recess includes a groove surrounding the semiconductor element and the block electrode and a rectangular hole overlapping the groove and having a larger dimension than a width of the groove.
15. The semiconductor device according to claim 3 , wherein the recess includes a groove surrounding the semiconductor element and the block electrode and a rectangular hole overlapping the groove and having a larger dimension than a width of the groove.
16. The semiconductor device according to claim 7 , wherein the recess includes a groove surrounding the semiconductor element and the block electrode and a rectangular hole overlapping the groove and having a larger dimension than a width of the groove.