Optoelectronic organic component and method for the production thereof
View Patent ↗Optoelectronic organic component, comprising: a first electrode, a first planarization layer which is disposed on the first electrode, a first injection layer which is disposed on the planarization layer, an organic functional layer which is disposed on the injection layer, a second electrode which is disposed on the organic functional layer, wherein in the case that the first electrode is an anode, the following applies for the energy levels: E F −E HOMO,Inj. ≦−E HOMO,Plan. and EF−E HOMO,Inj<E HOMO,Funk. or in the case that the first electrode is a cathode, the following applies for the energy levels: E LUMO,Inj. −E F ≦E LUMO,Plan. −EF and E LUMO,Inj. −EF<E LUMO,Funk. −E F , wherein E F is the fermi energy, E HOMO is the energy of the highest occupied energy level of the respective layer and E LUMO is the energy of the lowest unoccupied energy level of the respective layer.
1. An optoelectronic organic component, comprising:
a first electrode,
a first planarization layer which is disposed on the first electrode,
a first injection layer which is disposed on the planarization layer,
an organic functional layer which is disposed on the injection layer,
a second electrode which is disposed on the organic functional layer,
wherein in the case that the first electrode is an anode, the following applies for the energy levels:
E F −E HOMO,Inj. ≦E F −E HOMO,Plan. and E F −E HOMO,Inj. <E F −E HOMO,Funk. or
in the case that the first electrode is a cathode, the following applies for the energy levels:
E LUMO,Inj. −E F ≦E LUMO,Plan. −E F and E LUMO,Inj. −E F <E LUMO,Funk. −E F ,
wherein E F is the fermi energy, E HOMO is the energy of the highest occupied energy level of the respective layer and E LUMO is the energy of the lowest unoccupied energy level of the respective layer.
2. The optoelectronic organic component as claimed in claim 1 , wherein in the case that the first electrode is an anode, the following applies for the energy levels:
E F −E HOMO,Plan. <E F −E HOMO,Funk. or
in the case that the first electrode is a cathode, the following applies for the energy levels:
E LUMO,Funk. −E F <E LUMO,Plan. −E F .
3. The optoelectronic organic component as claimed in claim 1 ,
wherein the charge carriers emitted by the first electrode are accumulated in the first injection layer.
4. The optoelectronic organic component as claimed in claim 3 , wherein the charge carriers which are accumulated in the first injection layer are injected into the subsequent layer.
5. The optoelectronic organic component as claimed in claim 1 ,
the following condition applies for the resistances R of the first planarization layer (R Plan. ) and the first injection layer (R Inj. ), and for the boundary surface resistance through contact between the first planarization layer and the first injection layer (R Kontakt,Inj. ) and the boundary surface resistance through contact between the first injection layer and the organic functional layer (R Kontakt,Funk. ):
R Plan. +R Kontakt,Inj. ≦R Inj. +R Kontakt,Funk. .
6. The optoelectronic organic component as claimed in claim 1 , wherein the first injection layer has a layer thickness of 1 to 20 nm.
7. The optoelectronic organic component as claimed in claim 1 , wherein the first injection layer is doped.
8. The optoelectronic organic component as claimed in claim 7 , wherein the dopant is selected from: MoO 2 , MoO 3 , WO 3 , ReO 3 , Re 2 O 7 , V 2 O 5 .
9. The optoelectronic organic component as claimed in claim 1 , wherein the first injection layer comprises a substance selected from:
4,4′,4″-tris(N-(1-naphthyl)-N-phenyl-amino)triphenylamine, phthalocyanine-copper complex, 4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine, N,N′-bis (naphthalene-1-yl)-N,N′-bis(phenyl)-benzidine, 2,2′,7,7′-tetrakis(N,N-diphenylamine)-9,9′-spirobifluorene, di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane, N,N′-bis(3-methylphenyl)-N,N′-bis(phenyl)-benzidine.
10. The optoelectronic organic component as claimed in claim 1 ,
wherein the first injection layer comprises a substance selected from:
PEDOT:PSS, poly(9-vinylcarbazole), poly(N,N′-bis(4 butylphenyl)-N,N′-bis(phenyl)-benzidine, poly(3-hexylthiophene), polyaniline.
11. The optoelectronic organic component as claimed in claim 1 ,
wherein the first planarization layer ( 2 ) comprises a substance selected from:
PEDOT:PSS, PEDOT-based materials, poly(9-vinylcarbazole), poly(N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)-benzidine, poly(3-hexylthiophene), polyaniline.
12. The optoelectronic organic component as claimed in claim 1 , additionally comprising:
a second planarization layer which is disposed between the second electrode and the organic functional layer,
a second injection layer which is disposed between the second planarization layer and the organic functional layer.
13. The optoelectronic organic component as claimed in claim 1 , which is formed as an electroluminescent component.
14. A method for the production of an optoelectronic organic component, comprising the method steps of:
A) providing a first electrode,
B) applying a first planarization layer to the first electrode,
C) applying a first injection layer to the first planarization layer,
D) applying an organic functional layer to the first injection layer,
E) applying a second electrode to the organic functional layer,
wherein in the case that the first electrode is an anode the following applies for the energy levels:
E F −E HOMO,Inj. ≦E F −E HOMO,Plan. and E F −E HOMO,Inj. <E F −E HOMO,Funk. or
in the case that the first electrode is a cathode, the following applies for the energy levels:
E LUMO,Inj. −E F ≦E LUMO,Plan. −E F and E LUMO,Inj. −E F <E LUMO,Funk. −E F ,
wherein E F is the fermi energy, E HOMO is the energy of the highest occupied energy level of the respective layer and E LUMO is the energy of the lowest unoccupied energy level of the respective layer.
15. The method as claimed in claim 14 , wherein the first injection layer is applied in method step C) by means of a wet-chemical process.
16. An optoelectronic organic component, comprising:
a first electrode;
a first planarization layer which is disposed on the first electrode;
a first injection layer which is disposed on the first planarization layer;
an organic functional layer which is disposed on the first injection layer;
a second electrode which is disposed on the organic functional layer;
a second planarization layer which is disposed between the second electrode and the organic functional layer,
a second injection layer which is disposed between the second planarization layer and the organic functional layer,
wherein the first electrode is an anode with the following energy levels:
E F −E HOMO,Inj. ≦E F −E HOMO,Plan. and E F −E HOMO,Inj. <E F −E HOMO,Funk. and
the second electrode is a cathode with the following energy levels:
E LUMO,Inj. −E F ≦E LUMO,Plan. −E F and E LUMO,Inj. −E F <E LUMO,Funk. −E F ,
wherein E F is the fermi energy, E HOMO is the energy of the highest occupied energy level of the respective layer and E LUMO is the energy of the lowest unoccupied energy level of the respective layer.