Semiconductor component having a plated through-hole and method for the production thereof
View Patent ↗A connection contact layer ( 4 ) is disposed between semiconductor bodies ( 1,2 ). In the second semiconductor body ( 2 ), a recess is provided. A connection layer ( 7 ) on the top face extends as far as the recess, in which a metallization ( 10 ) is present that conductively connects the connection contact layer ( 4 ) to the connection layer ( 7 ) in an electrical manner. A polymer ( 8 ) or a further metallization is present in the recess.
1. A semiconductor component having a plated through-hole, comprising
a first semiconductor body of semiconductor material connected to a second semiconductor body of semiconductor material;
an electrically conductive connection contact layer arranged between the semiconductor bodies;
in the second semiconductor body a recess extending from the connection contact layer up to an upper side of the second semiconductor body facing away from the connection contact layer;
an electrically conductive connection layer arranged on the upper side of the second semiconductor body, the connection layer extending up to and in contact with a side wall of the recess;
a metallization comprising tungsten or copper that electroconductively connects the connection contact layer to the connection layer formed in the recess on an electrically conductive liner that comprises Ti or Ta; and
a polymer or a further metallization formed in the recess.
2. The semiconductor component according to claim 1 , wherein the polymer or the further metallization fills up the recess.
3. The semiconductor component according to claim 1 , wherein the polymer is an electrically conductive polymer.
4. The semiconductor component according to claim 1 , wherein the further metallization is an under-bump metallization.
5. A method for producing a plated through-hole in a semiconductor component, comprising:
a first semiconductor body of semiconductor material is provided with an electrically conductive connection contact layer and is connected to a second semiconductor body of semiconductor material in such a manner that the connection contact layer is arranged on a side of the first semiconductor body facing the second semiconductor body;
a recess in which the connection contact layer is exposed is produced in the second semiconductor body;
an electrically conductive liner that comprises Ti or Ta is applied and a metallization of tungsten or copper is applied thereon and structured in such a manner that the connection contact layer is electroconductively connected to the metallization;
an electrically conductive connection layer is applied and structured in such a manner that the connection layer is arranged on an upper side of the second semiconductor body and extends up to and in contact with a side wall of the recess such that the connection layer is electroconductively connected to the metallization; and
a polymer or a further metallization is introduced into the recess.
6. The method according to claim 5 , wherein the connection contact layer is arranged in a dielectric on the first semiconductor body, and an upper side of the connection contact layer facing away from the first semiconductor body is exposed before the connection of the first semiconductor body to the second semiconductor body.
7. The method according to claim 5 , wherein an electrically insulating layer is applied in the recess and etched back to form a side wall spacer before the metallization is applied.
8. The method according to claim 5 , wherein the recess is filled with an electrically conductive polymer.
9. The method according to claim 5 , wherein the recess is provided with an under-bump metallization as a further metallization.
10. The method according to claim 9 , wherein the recess is filled with the under-bump metallization.
11. The method according to claim 5 , wherein the recess is filled with the polymer, a portion of the polymer that projects past the recess is removed in a planarizing manner until the connection layer is reached, and a passivation layer is applied.
12. The method according to claim 11 , wherein the passivation layer above the polymer is removed, the polymer is removed, and a further metallization is applied in the recess.
13. The method according to claim 12 , wherein an under-bump metallization is applied as the further metallization in the recess.
14. The method according to claim 12 , wherein the recess is filled with the further metallization.