Variable resistance nonvolatile memory element and method for manufacturing the same
View Patent ↗A nonvolatile memory element which inhibits deterioration of an oxygen concentration profile of a variable resistance layer due to a thermal budget and is able to stably operate at low voltages, and a method for manufacturing the nonvolatile memory element are provided. The nonvolatile memory element includes a first electrode layer formed above a substrate, a variable resistance layer disposed on the first electrode layer, and a second electrode layer disposed on the variable resistance layer, and the variable resistance layer has a two-layer structure in which an oxygen- and/or nitrogen-deficient tantalum oxynitride layer and a tantalum oxide layer are stacked.
1. A nonvolatile memory element comprising:
a first electrode layer formed above a substrate;
a variable resistance layer disposed directly on said first electrode layer; and
a second electrode layer disposed directly on said variable resistance layer,
wherein said variable resistance layer:
consists of a two-layer structure in which an oxygen- and/or nitrogen-deficient tantalum oxynitride layer and a tantalum oxide layer are stacked;
changes to a low resistance state due to oxygen ions moving from said tantalum oxide layer to said oxygen- and/or nitrogen-deficient tantalum oxynitride layer; and
changes to a high resistance state due to the oxygen ions moving from said oxygen- and/or nitrogen-deficient tantalum oxynitride layer to said tantalum oxide layer;
wherein a thickness of said oxygen- and/or nitrogen-deficient tantalum oxynitride layer is greater than a thickness of said tantalum oxide layer;
wherein, when a composition of said oxygen- and/or nitrogen-deficient tantalum oxynitride layer is represented by TaO x N y , x and y satisfy:
0.8≦x+y≦1.9 and
0<y≦0.5
and
wherein, when a composition of said tantalum oxide layer is represented by TaO z , z satisfies:
x+y<z.
2. The nonvolatile memory element according to claim 1 ,
wherein said oxygen- and/or nitrogen-deficient tantalum oxynitride layer has electrical conductivity.
3. The nonvolatile memory element according to claim 1 ,
wherein an electrode in contact with said tantalum oxide layer comprises one or more materials, each having a standard electrode potential higher than a standard electrode potential of tantalum.
4. The nonvolatile memory element according to claim 3 ,
wherein the electrode in contact with said tantalum oxide layer comprises one or more materials from among Au, Pt, Ir, Pd, Cu, and Ag.
5. The nonvolatile memory element according to claim 1 ,
wherein an electrode in contact with said oxygen- and/or nitrogen-deficient tantalum oxynitride layer comprises one or more materials, each having a standard electrode potential lower than a standard electrode potential of tantalum.
6. The nonvolatile memory element according to claim 5 ,
wherein the electrode in contact with said oxygen- and/or nitrogen-deficient tantalum oxynitride layer comprises one or more materials from among W, Ni, and TaN.
7. The nonvolatile memory element according to claim 1 ,
wherein said variable resistance layer has a thickness of 20 nm to 100 nm.