Three-level power conversion apparatus
Wiring between semiconductor modules and a direct current power supply circuit, which construct a three-level power conversion apparatus, is made to be low inductance, so reduction in size and cost can be attained easily. In cases where a connection is made between direct current power supplies (electrolytic capacitors) and IGBT modules of a three-level inverter, a wiring conductor for a bi-directional switch part is divided into three conductors or two conductors on a same surface, and these conductors are sandwiched by a P conductor and an N conductor, which are arranged at outer sides thereof, respectively, through insulating materials, so a three-layer wiring structure of a sealed structure is formed. As a result, wiring inductance can be made small even with a small number of laminated layers, so that the reduction in size and cost of the apparatus as a whole is achieved.
1. A three-level power conversion apparatus comprising:
a direct current power supply circuit that has a positive side terminal, a negative side terminal and an intermediate potential point;
a semiconductor module that is inserted between said positive side terminal and said negative side terminal; and
a bi-directional switch that is inserted between said intermediate potential point and said semiconductor module;
wherein said semiconductor module is composed of:
a first switch element with a collector thereof connected to the positive side terminal of said direct current power supply circuit, and a diode connected in anti-parallel to said first switch element; and
a second switch element with an emitter thereof connected to the negative side terminal of said direct current power supply circuit, and a diode connected in anti-parallel to said second switch element;
wherein said bi-directional switch is composed of a series circuit including a third switch element and a fourth switch element that are connected between a connection point of an emitter of said first switch element and a collector of said second switch element, and the intermediate potential point of said direct current power supply circuit;
wherein an electric potential of three levels is outputted from an output terminal of said semiconductor module;
wherein said three-level power conversion apparatus further comprises:
a first conductor that makes a connection between the positive side terminal of said direct current power supply circuit and said first switch element;
a second conductor that makes a connection between the negative side terminal of said direct current power supply circuit and said second switch element;
a third conductor that makes a connection between the intermediate potential point of said direct current power supply circuit and said third switch element;
a fourth conductor that makes a connection between said fourth switch element and said connection point; and
a fifth conductor that makes a connection between said third switch element and said fourth switch element;
wherein said third conductor, said fourth conductor and said fifth conductor are electrically separate and coplanar;
wherein said first conductor, said second conductor and said third conductor, said fourth conductor and said fifth conductor are arranged in a superposed manner on said semiconductor module and said bi-directional switch so that a three-layer wiring structure is thereby achieved, and
said third conductor, said fourth conductor and said fifth conductor are separate and are arranged between said first and second conductors, and at the same time, said third conductor, said fourth conductor and said fifth conductor are disposed between insulating materials to form a close contact structure.
2. A three-level power conversion apparatus comprising:
a direct current power supply circuit that has a positive side terminal, a negative side terminal and an intermediate potential point,
a semiconductor module that is inserted between said positive side terminal and said negative side terminal; and
a bi-directional switch that is inserted between said intermediate potential point and said semiconductor module;
wherein said semiconductor module is composed of:
a first switch element with a collector thereof connected to the positive side terminal of said direct current power supply circuit, and a diode connected in anti-parallel to said first switch element; and
a second switch element with an emitter thereof connected to the negative side terminal of said direct current power supply circuit, and a diode connected in anti-parallel to said second switch element;
wherein said bi-directional switch is composed of a series circuit including a third switch element and a fourth switch element that are connected between a connection point of an emitter of said first switch element and a collector of said second switch element, and the intermediate potential point of said direct current power supply circuit;
wherein an electric potential of three levels is outputted from an output terminal of said semiconductor module;
wherein said three-level power conversion apparatus further comprises:
a first conductor that makes a connection between the positive side terminal of said direct current power supply circuit and said first switch element;
a second conductor that makes a connection between the negative side terminal of said direct current power supply circuit and said second switch element;
a third conductor that makes a connection between the intermediate potential point of said direct current power supply circuit and said series circuit; and
a fourth conductor that makes a connection between said series circuit and said connection point;
wherein said third and fourth conductors are electrically separate and coplanar;
wherein said first conductor, said second conductor and said third and fourth conductors are arranged in a superposed manner on said semiconductor module and said bi-directional switch so that a three-layer wiring structure is thereby achieved; and
wherein said third switch element and said fourth switch element are arranged inside a same package, and
said third and fourth conductors are separate and are arranged between said first and second conductors, and, said third and fourth conductors are disposed between insulating materials to form a close contact structure.