PROCESS FOR PRODUCTION OF SILICON POWDER, MULTI-CRYSTAL-TYPE SOLAR CELL PANEL, AND PROCESS FOR PRODUCTION OF THE SOLAR CELL PANEL
Disclosed is a process for producing a silicon powder, which comprises the steps of: powderizing a silicon ingot having a grade of 99.999% or more into a crude silicon powder having a particle diameter of 3 mm or less by means of high-pressure purified-water cutting; and reducing the crude silicon powder into a silicon powder having a particle diameter ranging from 0.01 to 10 [mu]m inclusive by means of at least one method selected from jet milling, wet granulation, ultrasonic wave disruption and shock wave disruption. The process is a technique for producing a silicon powder rapidly from a silicon ingot without reducing purity.
1 . A method of producing silicon powder, comprising:
pulverizing by high pressure pure water cutting a silicon ingot having a purity of 99.999% or more into coarse silicon powder having a particle size of 3 mm or less; and
pulverizing the coarse silicon powder into silicon powder having a particle size of 0.01 to 10 μm by at least one method selected from jet milling, wet atomization, ultrasonic disruption, and shock wave disruption.
2 . A method of manufacturing a polycrystalline solar cell panel, comprising:
forming a silicon powder layer by applying on the substrate the silicon powder obtained by the method according to claim 1 ; and
forming a polycrystalline silicon film by sweeping plasma on a surface of the silicon powder layer to melt, and by recrystallizing the melted silicon powder layer.
3 . The method of manufacturing a polycrystalline solar cell panel according to claim 2 , wherein the step of applying the silicon powder on the substrate is performed with at least one method selected from squeegee application, die coating, ink-jet application, or dispenser application.
4 . The method of manufacturing a polycrystalline solar cell panel according to claim 2 , wherein the substrate contains at least one of Al, Ag, Cu, Sn, Zn, In, and Fe.
5 . The method of manufacturing a polycrystalline solar cell panel according to claim 2 , wherein the plasma is atmospheric pressure plasma.
6 . The method of manufacturing a polycrystalline solar cell panel according to claim 2 , wherein a rate of the sweeping is 100 to 2,000 mm/sec.
7 . The method of manufacturing a polycrystalline solar cell panel according to claim 2 , wherein the silicon powder is P-type silicon powder containing boron.
8 . The method of manufacturing a polycrystalline solar cell panel according to claim 7 , further comprising:
arranging the substrate on which the polycrystalline silicon film is formed in a plasma reaction chamber; and
introducing gas containing phosphorus or arsenic into the plasma reaction chamber so as to convert the gas into plasma and to form a P-N junction by doping a surface layer of a P-type polycrystalline silicon film containing the boron into N-type.
9 . The method of manufacturing a polycrystalline solar cell panel according to claim 7 , further comprising:
arranging the substrate on which the polycrystalline silicon film is formed in a plasma reaction chamber; and
disposing a solid material containing phosphorus or arsenic in the reaction chamber and irradiating the solid material with plasma generated by introducing inert gas so as to form a P-N junction by doping a surface layer of a P-type polycrystalline silicon film containing the boron into N-type.
10 . The method of manufacturing a polycrystalline solar cell panel according to claim 2 , wherein the silicon powder is N-type silicon powder containing phosphorus or arsenic.
11 . The method of manufacturing a polycrystalline solar cell panel according to claim 10 , wherein a polycrystalline silicon film having a P-N junction is formed by sweeping plasma containing boron particles on a surface of a N-type silicon powder layer applied on the substrate.
12 . The method of manufacturing a polycrystalline solar cell panel according to claim 2 , wherein
the step of forming the silicon powder layer comprises:
forming a N-type silicon powder layer on the substrate by applying N-type silicon powder containing phosphorus or arsenic; and
forming a P-type silicon powder layer by applying P-type silicon powder containing boron on the N-type silicon powder layer.
13 . A polycrystalline solar cell panel obtained using the method according to claim 2 .