Metallized film capacitor and case mold type capacitor including same
View Patent ↗A metallized film capacitor includes a dielectric film and two metal vapor-deposition electrodes facing each other across the dielectric film. At least one of the metal vapor-deposition electrodes is made of substantially only aluminum and magnesium. This metallized film capacitor has superior leak current characteristics and moisture resistant performances, and can be used for forming a case mold type capacitor with a small size.
1. A metallized film capacitor comprising:
a dielectric film;
a first metal vapor-deposition electrode provided on an upper surface of the dielectric film;
a second metal vapor-deposition having an upper surface facing a lower surface of the first metal vapor-deposition electrode across the dielectric film;
a first electrode connected to the first metal vapor-deposition electrode; and
a second electrode connected to the second metal vapor-deposition electrode, wherein
at least one metal vapor-deposition electrode of the first metal vapor-deposition electrode and the second metal vapor-deposition electrode is made of substantially only aluminum and magnesium.
2. The metallized film capacitor according to claim 1 , wherein
the at least one metal vapor-deposition electrode is made of an alloy including aluminum and magnesium,
an amount of magnesium in the alloy ranges from 0.5 wt. % by to 15 wt. %,
magnesium is distributed unevenly in the at least one metal vapor-deposition electrode, and
a maximum concentration of magnesium in the at least one of the metal vapor-deposition electrodes is located within a region from an upper surface of the at least one metal vapor-deposition electrode up to a distance of ½ of a thickness of the at least one metal vapor-deposition electrode, or within a region from a lower surface of the at least one metal vapor-deposition electrode up to a distance of ½ of the thickness of the at least one metal vapor-deposition electrode.
3. The metallized film capacitor according to claim 1 , wherein the amount of magnesium in the at least one metal vapor-deposition electrode ranges from 0.5 wt. % to 45 wt. %.
4. The metallized film capacitor according to claim 1 , wherein the at least one of metal vapor-deposition electrode includes:
a first metal vapor-deposition layer mainly containing aluminum, and
a second metal vapor-deposition layer containing magnesium.
5. The metallized film capacitor according to claim 4 , wherein
a lower surface of the first metal vapor-deposition layer constitutes a lower surface of the at least one metal vapor-deposition electrode, and
the second metal vapor-deposition layer is located on an upper surface of the first metal vapor-deposition layer.
6. The metallized film capacitor according to claim 4 , wherein
a lower surface of the second metal vapor-deposition layer constitutes a lower surface of the at least one metal vapor-deposition electrode, and
the first metal vapor-deposition layer is located on an upper surface of the second metal vapor-deposition layer.
7. The metallized film capacitor according to claim 6 , wherein the at least one metal vapor-deposition electrode further includes a third metal vapor-deposition layer formed on an upper surface of the first metal vapor-deposition layer, the third metal vapor-deposition layer containing magnetism.
8. The metallized film capacitor according to claim 1 , wherein
the first electrode is provided on an end of the dielectric film, said metallized film capacitor further comprising a low resistance portion provided on an upper surface of the first metal vapor-deposition electrode at the end of the dielectric film, the low resistance portion being connected to the first electrode, the low resistance portion being made of a conductor.
9. The metallized film capacitor according to claim 1 , further comprising an oxide film provided on an upper surface of the at least one metal vapor-deposition electrode.
10. The metallized film capacitor according to claim 1 , wherein
the at least one metal vapor-deposition electrode is the first metal vapor-deposition electrode,
the second metal vapor-deposition electrode is made of substantially only aluminum,
the first metal vapor-deposition electrode includes a first non-divided electrode portion that is not divided,
the second metal vapor-deposition electrode includes:
a second non-divided electrode portion that is not divided;
a plurality of divided electrode portions; and
a plurality of fuses that connect the plural divided electrode portions to the second non-divided electrode portion, and
the first non-divided electrode portion faces the second non-divided electrode portion and the plurality of divided electrode portions across the dielectric film.
11. The metallized film capacitor according to claim 1 , wherein
the at least one metal vapor-deposition electrode is the second metal vapor-deposition electrode,
the first metal vapor-deposition electrode is made of substantially only aluminum,
the second metal vapor-deposition electrode includes a first non-divided electrode portion that is not divided,
the first metal vapor-deposition electrode includes:
a second non-divided electrode portion that is not divided;
a plurality of divided electrode portions; and
a plurality of fuses that connect the plural divided electrode portions with the second non-divided electrode portion, and
the first non-divided electrode portion faces the second non-divided electrode portion and the plural divided electrode portions across the dielectric film.
12. A case mold type capacitor comprising:
a plurality of metallized film capacitors;
a bus bar that connects the plurality of metallized film capacitors with one another, the bus bar includes a terminal portion;
a case that accommodates the plurality of metallized film capacitors and the bus bar therein; and
a molding resin filling the case as to cover the plurality of metallized film capacitors and the bus bar such that the terminal portion of the bus bar is exposed, wherein
at least one of the plural metallized film capacitors is the metallized film capacitor according to claim 1 .