High-voltage transistor having multiple dielectrics and production method
View Patent ↗On a doped well ( 2 ) for a drift section, at least two additional dielectric regions ( 7,9 ) having different thicknesses are present between a first contact region ( 4 ) for a drain and a second contact region ( 5 ) for source on the upper face ( 10 ) of the substrate ( 1 ), and the gate electrode ( 11 ) or an electric conductor, which is electrically conductively connected to the gate electrode, covers each of said additional dielectric regions at least partially.
1. A high-voltage transistor comprising:
a substrate made of semiconductor material with an upper side,
doped wells at the upper side, which comprise at least a first well provided for a drift section and a second well provided for a channel region;
a first contact area for a drain terminal in the first well;
a second contact area for a source terminal in the second well;
a gate dielectric on a region of the second well between the first contact area and the second contact area, a gate electrode on the gate dielectric; and
at least two additional dielectric regions, each of whose thicknesses is different from one another and from a thickness of the gate dielectric, the at least two additional dielectric regions being disposed on the upper side on the first well between the first contact area and the second contact area,
wherein at least one of the at least two dielectric regions is a capacitor dielectric, and
wherein an electrical conductor made of polysilicon and electroconductively connected to the gate electrode is arranged on the capacitor dielectric.
2. A high-voltage transistor comprising:
a substrate made of semiconductor material with an upper side,
doped wells at the upper side, which comprise at least a first well provided for a drift section and a second well provided for a channel region;
a first contact area for a drain terminal in the first well;
a second contact area for a source terminal in the second well;
a gate dielectric on a region of the second well between the first contact area and the second contact area, a gate electrode on the gate dielectric; and
at least two additional dielectric regions, each of whose thicknesses is different from one another and from a thickness of the gate dielectric, the at least two additional dielectric regions being disposed on the upper side on the first well between the first contact area and the second contact area,
wherein the gate electrode completely covers the gate dielectric and at least two of the at least two additional dielectric regions, and
wherein the gate dielectric is disposed on a region of the first well.
3. A method for producing a high-voltage transistor, comprising:
producing a first well of a first conductivity type and a second well of an opposite, second conductivity type on an upper side of a substrate made of semiconductor material;
producing a first contact area in the first well and a second contact area in the second wells;
producing a gate dielectric on a region of the second well between the first contact area and the second contact area; and
producing at least two additional dielectric regions, each of whose thicknesses is different from one another and from the thickness of the gate dielectric, such that the at least two additional dielectric regions are disposed on the upper side on the first well between the first contact area and the second contact area,
wherein a gate electrode made of polysilicon is applied to the gate dielectric,
wherein an electric conductor is applied to one of the additional dielectric regions, and
wherein the electrical conductor is electroconductively connected to the gate electrode.
4. The method according to claim 3 , wherein at least one of the at least two additional dielectric regions is applied as an oxide layer to the upper side, and
wherein one of the at least two additional dielectric regions is produced as a field oxide or shallow trench isolator.