Light emitting diode device with luminescent material
View Patent ↗The invention provides a light emitting diode device comprising a light emitting diode arranged on a substrate and a wavelength converting element. The wavelength converting element contains a luminescent material a Mn 4+ -activated fluoride compound having a garnet-type crystal structure. The Mn 4+ -activated fluoride compound preferably answers the general formula {A 3 }[B 2-x-y Mn x Mg y ](Li 3 )F 12-d O d , in which formula A stands for at least one element selected from the series consisting of Na + and K + and B stands for at least one element selected from the series consisting of Al 3+ , B 3+ , Sc 3+ , Fe 3+ , Cr 3+ , Ti 4+ and In 3+ , and in which formula x ranges between 0.02 and 0.2, y ranges between 0.0 (and incl. 0.0) and 0.4 and d ranges between 0 (and incl. 0) and 1. As the luminescent materials of the described type and structure have high stability and low sensitivity towards humid environments, they can advantageously be used as in wavelength conversion elements of LED devices.
1. A light emitting diode device comprising:
a light emitting diode arranged on a substrate, and
a wavelength converting element comprising a Mn 4+ -activated fluoride compound as a luminescent material, wherein the Mn 4+ -activated fluoride compound has a garnet-type crystal structure.
2. A light emitting diode device according to claim 1 , wherein the Mn 4+ -activated fluoride compound has the formula {A 3 }[B 2-x-y Mn x Mg y ](Li 3 )F 12-d O d , wherein A is least one element selected from the group consisting of Na + and K + and B is at least one element selected from the group consisting of Al 3+ , B 3+ , Sc 3+ , Fe 3+ , Cr 3+ , Ti 4+ and In 3+ , and wherein 0.02<x<0.2, 0.0≦y<0.4, and 0≦d<1.
3. A light emitting diode device according to claim 2 , wherein the Mn 4+ -activated fluoride compound material has the formula
{Na 3 }[Al 2 x y Mn x Mg y ](Li 3 )F 12-d O d .
4. A light emitting diode device according to claim 1 , wherein the wavelength converting element is formed as a ceramic platelet.
5. A light emitting diode device according to claim 1 wherein the wavelength converting element is formed as a shaped body of resin material comprising the Mn 4+ -activated fluoride compound.
6. A luminescent material comprising a Mn 4+ -activated fluoride compound, wherein the compound has a garnet-type crystal structure.
7. A luminescent material according to claim 6 , wherein the Mn 4+ -activated fluoride compound has the formula {A 3 }[B 2-x-y Mn x Mg y ](Li 3 )F 12-d O d , wherein A is at least one element selected from the group consisting of Na + and K + and B is least one element selected from the group consisting of Al 3+ , B 3+ , Sc 3+ , Fe 3+ , Cr 3+ , Ti 4+ and In 3 + , and wherein 0.02<x<0.2, 0.0≦y<0.4, and 0≦d<1.
8. A luminescent material according to claim 7 , wherein the Mn 4+ -activated fluoride compound has the formula {Na 3 }[Al 2 x y Mn x Mg y ](Li 3 )F 12-d O d .
9. A method for preparing a luminescent material comprising a Mn 4+ -activated fluoride compound, wherein the compound has a garnet-type crystal structure characterized in that it encompasses the following steps:
preparing a first aqueous solution by dissolving K 2 MnF 6 in water containing at least 20 vol % HF,
preparing a second aqueous solution of salts of the remaining metals of which the intended garnet is composed, in molar ratio's corresponding to the garnet composition,
mixing stoichiometric amounts of both solutions to form a mixture comprising a garnet composition,
stirring the mixture, and
isolating the garnet composition from the mixture.
10. The method of claim 9
wherein the first aqueous solution contains NaHF 2 .
11. The method of claim 9 wherein isolating the resulting garnet composition from the mixture comprises filtering the garnet composition from the mixture.
12. The method of claim 11 further comprising the step of washing the garnet composition with 2-propanol to create a powder.
13. The method of claim 12 further comprising the step drying the powder at under vacuum at 110° C.
14. The method of claim 13 further comprising the step of mechanically grinding the powder.