Method for contacting a chip
View Patent ↗The invention relates to a method for contacting a chip with a conductor arrangement and also to a conductor arrangement, particularly a transponder antenna, an intermediate carrier or the like, with a carrier substrate ( 55 ) for accommodating the chip and with a chip having chip terminal faces formed thereon, wherein a conductor material layer ( 66 ) is formed on the carrier substrate, wherein the conductor material layer forms a conductor arrangement ( 64 ) having at least two conductors ( 56, 57 ) which are connected to each other in a chip contact area ( 58 ), wherein an insulating gap ( 59 ) is formed in the chip contact area, such that mutually electrically insulated conductor terminal faces ( 60, 61 ) of the conductors are formed, wherein the chip terminal faces are contacted with the conductor terminal faces, and wherein the insulating gap is formed by removal of the conductor material layer by means of a laser.
1. A method for contacting a chip with a conductor arrangement, said conductor arrangement including a carrier substrate for accommodating the chip having chip terminal faces formed thereon, said method comprising:
forming a conductor material layer on the carrier substrate, wherein the conductor material layer forms a conductor arrangement having at least two conductors which are connected to each other in a chip contact area;
forming an insulating gap in the chip contact area by removing at least a portion of the conductor material layer in the chip contact area using a laser, such that mutually electrically insulated conductor terminal faces of the conductors are formed;
determining a relative position of the insulating gap with the aid of an image processing device; and
based on the relative position of the insulating gap contacting the chip terminal faces with the conductor terminal faces.
2. The method according to claim 1 , further comprising the step of cleaning the chip contact area with the aid of a plasma treatment.
3. The method according to claim 1 , further comprising the step of applying an adhesive material onto the chip contact area prior to or subsequent to contacting the chip terminal faces with the conductor terminal faces.
4. The method according to claim 1 , in which the step of determining a relative position of the insulating gap with the aid of an image processing device is performed prior to contacting the chip terminal faces with the conductor terminal faces.
5. The method according to claim 4 , wherein the step of determining the relative position is performed prior to or subsequent to the application of an adhesive material onto the chip contact area.
6. The method according to claim 4 , further comprising the step of calculating a chip position on the carrier substrate from data of the image processing device using a machine control system.
7. The method according to claim 1 , further comprising the step of determining a relative position of outer areas of the chip contact area with the aid of an image processing device prior to contacting the chip terminal faces with the conductor terminal faces.
8. The method according to claim 1 , further comprising the step of fixing the carrier substrate on a plate with the aid of a liquid film in order to form the insulating gap.
9. The method according to claim 1 , further comprising the step of fixing the carrier substrate on a plate by a vacuum in order to form the insulating gap.
10. The method according to claim 1 , in which the conductor material layer is made of aluminum.
11. The method according to claim 1 , in which the conductor arrangement is a transponder antenna.
12. The method according to claim 11 , further comprising the step of tuning the frequency of the transponder antenna by removing the conductor material layer or by separating conductor segments using the laser.
13. The method according to claim 12 , in which the transponder antenna is designed with pre-defined separating areas which can be separated using the laser.
14. The method according to claim 1 , in which the conductor arrangement is an intermediate carrier.
15. The method according to claim 1 , in which the insulating gap has a gap width of ≦20 μm.
16. The method according to claim 1 , in which four insulated conductor terminal faces are formed in the chip contact area.
17. The method according to claim 1 , in which the carrier substrate is a film strip having a plurality of conductor arrangements disposed in parallel rows and is moved relative to the laser.
18. The method according to claim 1 , further comprising the step of contacting a chip intermediate carrier prior to contacting the chip terminal faces with the conductor terminal faces.