Method for using laser ablation process for forming solar cell components
View Patent ↗Disclosed is a method for removing individual layers of a layer stack. The layer stack includes a semiconductor layer disposed onto an optically dense electrically conductive layer which in turn is disposed upon an optically transparent layer. A laser at a first power level is projected through the optically transparent layer and onto the optically dense electrically conductive layer. The semiconductor layer is removed through heat evaporation imparted by the laser at the first power level without removing the optically dense electrically conductive layer. Optionally, the laser at a second power level, which is greater than the first power level, is projected onto the optically dense electrically conductive layer through the optically transparent layer. The optically dense electrically conductive layer is removed through heat evaporation imparted by the laser at the second power level without removing the optically transparent layer.
1. A method for removing at least regions of at least one semiconductor layer of a layer stack, in which an optically dense metallization layer is heated such that the semiconductor layer located thereabove is detached without removing the optically dense metallization layer, wherein the optically dense metallization layer is heated starting from the side facing away from the at least one semiconductor layer.
2. The method according to claim 1 , wherein the optically dense metallization layer is heated such that at least one constituent, having lower thermal conductivity and/or a lower boiling point, of the semiconductor layer located thereabove is evaporated.
3. The method according to claim 1 wherein in that the optically dense metallization layer is heated through one or more optically transparent layers.
4. The method according to claim 1 wherein in that the heating is achieved by means of a laser.
5. The method according to claim 1 wherein in that the heating is achieved by means of an ns laser.
6. The method according to claim 1 wherein the heating is achieved by means of a pulsed laser.
7. The method according to claim 1 wherein the laser beam is represented on the layer stack by means of an optical light guide having a square or round cross-section.
8. The method according to claim 1 wherein the optically dense metallization layer is heated such that it evaporates after the at least one semiconductor layer has been removed.
9. The method according to claim 1 wherein edge deletion of a solar cell is carried out.
10. The method according to claim 1 wherein solar cell structuring is carried out.
11. A method for removing individual layers of a layer stack, comprising:
forming the layer stack comprising a semiconductor layer disposed onto an optically dense electrically conductive layer which in turn is disposed upon an optically transparent layer;
projecting a laser at a first power level through the optically transparent layer and onto the optically dense electrically conductive layer; and
removing the semiconductor layer through heat evaporation imparted by the laser at the first power level without removing the optically dense electrically conductive layer.
12. The method of claim 11 , including the step of projecting the laser at a second power level which is greater than the first power level onto the optically dense electrically conductive layer through the optically transparent layer.
13. The method of claim 12 , including the step of removing the optically dense electrically conductive layer through heat evaporation imparted by the laser at the second power level without removing the optically transparent layer.
14. The method of claim 13 , wherein the semiconductor layer comprises selenium.