IP Library Patent Application 13513917
Patent Application
App. No. 13/513,917

ABRASIVE MATERIAL

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Patent No.
US None
App. No.
13/513,917
Abstract

The present invention provides an abrasive material capable of polishing difficult-to-polish silicon carbide at a high degree of surface precision. The present invention relates to an abrasive material including manganese dioxide particles having a non-needle-like shape possessing a ratio of the longitudinal axis to the transverse axis of the particles observed with a scanning electron microscope of 3.0 or less. The abrasive material is preferable if the average particle size D SEM of the longitudinal axis of the observed particles is 1.0 μm or less, and if the particle size D 50 of the volume-based cumulative fraction of 50% in laser diffraction/scattering particle size distribution measurement is 2.0 μm or less.

Claims (21)

1 . An abrasive material comprising manganese dioxide particles having a non-needle-like shape having a longitudinal axis and a transverse axis, wherein a ratio of the longitudinal axis to the transverse axis of the particles is 3.0 or less.

2 . The abrasive material according to claim 1 , wherein the average particle size D 50 of the longitudinal axis of the particles is 1.0 μm or less.

3 . The abrasive material according to claim 1 wherein the particle size D 50 of the volume-based cumulative fraction of 50% in laser diffraction/scattering particle size distribution measurement is 2.0 μm or less.

4 . The abrasive material according to claim 1 wherein the specific surface area is 20 m 2 /g or more.

5 . The abrasive material according to claim 1 wherein the crystal structure of manganese dioxide is of the γ-type.

6 . The abrasive material according to claim 1 wherein the crystal structure of manganese dioxide is of the β-type.

7 . An abrasive material slurry comprising the abrasive material according claim 1 .

8 . A method for producing the abrasive material according to claim 5 , comprising a dry pulverization step of dry pulverizing the γ-type manganese dioxide deposited on an anode by electrolysis.

9 . A method for producing the abrasive material according to claim 6 , comprising:

a heating step of heating the γ-type manganese dioxide deposited on an anode by electrolysis in a hot atmosphere set at 200° C. to 600° C.; and a dry pulverization step of dry pulverizing the heated manganese dioxide.

10 . A method for producing an abrasive material slurry comprising forming a slurry comprising the abrasive material obtained by the method for producing the abrasive material, according to claim 8 .

11 . The abrasive material according to claim 2 wherein the particle size D 50 of the volume-based cumulative fraction of 50% in laser diffraction/scattering particle size distribution measurement is 2.0 μm or less.

12 . The abrasive material according to claim 2 wherein the specific surface area is 20 m 2 /g or more.

13 . The abrasive material according to claim 3 wherein the specific surface area is 20 m 2 /g or more.

14 . The abrasive material according to claim 11 wherein the specific surface area is 20 m 2 /g or more.

15 . The abrasive material according to claim 2 wherein the crystal structure of manganese dioxide is of the γ-type.

16 . The abrasive material according to claim 3 wherein the crystal structure of manganese dioxide is of the γ-type.

17 . The abrasive material according to claim 4 wherein the crystal structure of manganese dioxide is of the γ-type.

18 . The abrasive material according to claim 11 wherein the crystal structure of manganese dioxide is of the γ-type.

19 . The abrasive material according to claim 12 wherein the crystal structure of manganese dioxide is of the γ-type.

20 . The abrasive material according to claim 13 wherein the crystal structure of manganese dioxide is of the γ-type.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2012
From: HORIUCHI, MIKIMASA; KURODA, RYUTARO; YAMAGUCHI, YASUHIDE
To: MITSUI MINING & SMELTING CO., LTD
Reel/Frame 028319/0334 →