Device for a laser lift-off method and laser lift-off method
View Patent ↗A device is intended for a laser lift-off method to sever at least one layer from a carrier. The device includes a laser that generates pulsed laser radiation and at least one beam splitter. The laser radiation is divided into at least two partial beams by the at least one beam splitter. The partial beams are superimposed in an irradiation plane, the irradiation plane being provided such that a major side of the carrier remote from the layer is arranged therein. At the irradiation plane, an angle (α) between the at least two partial beams is at least 1.0°.
1. A device for a laser lift-off method for severing at least one layer from a carrier comprising:
a laser that generates laser radiation; and
at least one beam splitter;
wherein
the laser radiation is divided into at least two partial beams by the at least one beam splitter,
the at least two partial beams are superimposed in an irradiation plane,
the laser radiation is pulsed laser radiation and a pulse duration of the laser radiation is at most 50 ns, and an optical path length difference between the partial beams corresponds to at least 0.025 times and at most 0.25 times the pulse duration,
the irradiation plane is provided such that a major side of the carrier remote from the layer is arranged therein, and
an angle between the at least two partial beams at the irradiation plane is at least 1.0°.
2. The device according to claim 1 , wherein all the partial beams have the same intensity, with a tolerance of at most 20%.
3. The device according to claim 1 , wherein the angle between the partial beams is 7.5° to 50° and an angle between the partial beams and a perpendicular of the irradiation plane is 0° to 50°.
4. The device according to claim 1 , wherein, between the associated beam splitter and the irradiation plane, the partial beams do not pass through any optical components provided for radiation transmission.
5. The device according to claim 1 , wherein the partial beams each exhibit identical cross-sectional areas and identical lateral dimensions in the irradiation plane with a tolerance of at most 15%.
6. The device according to claim 1 , wherein energy density of all the partial beams together in the irradiation plane is 200 mJ/cm 2 to 850 mJ/cm 2 per pulse.
7. A laser lift-off method for severing an epitaxially grown semiconductor layer sequence from a carrier, comprising:
providing a semiconductor layer or the semiconductor layer sequence grown epitaxially on the carrier;
dividing laser radiation into at least two partial beams; and
superimposing the partial beams in an irradiation plane in which a major side of the carrier remote from the semiconductor layer sequence is located,
wherein an angle between the at least two partial beams at the irradiation plane is at least 1.0°, the carrier has a thickness of 250 μm to 1.5 μm, and intensity modulation of the superimposed partial beams at a growth side of the carrier facing the semiconductor layer sequence is at most 20%, relative to a local envelope of a beam profile of the superimposed partial beams.
8. The method according to claim 7 , wherein an average roughness of a major side of the carrier remote from the semiconductor layer sequence is 0.1 μm to 5.0 μm.
9. The method according to claim 7 , wherein the carrier comprises sapphire or consists thereof, and the semiconductor layer sequence is based on GaN, InGaN and/or AlGaN.
10. The method according to claim 7 , which is carried out with a device comprising:
a laser that generates laser radiation; and
at least one beam splitter;
wherein
the laser radiation is divided into at least two partial beams by the at least one beam splitter,
the at least two partial beams are superimposed in an irradiation plane,
the irradiation plane is provided such that a major side of the carrier remote from the semiconductor layer is arranged therein, and
an angle between the at least two partial beams at the irradiation plane is at least 1.0°.
11. A laser lift-off method for severing an epitaxially grown semiconductor layer sequence from a carrier, comprising:
providing a semiconductor layer or the semiconductor layer sequence grown epitaxially on the carrier;
dividing laser radiation into at least two partial beams; and
superimposing the partial beams in an irradiation plane in which a major side of the carrier remote from the semiconductor layer sequence is located,
wherein
an angle between the at least two partial beams at the irradiation plane is 7.5° to 50° and an angle between the partial beams and a perpendicular of the irradiation plane is 0° to 30°,
the laser radiation is pulsed laser radiation and a pulse duration of the laser radiation is at most 50 ns,
an optical path length difference between the partial beams corresponds to at least 0.025 times and at most 0.25 times the pulse duration, and
an average roughness of the major side of the carrier remote from the semiconductor layer sequence is 0.1 μm to 5.0 μm.
12. A device for a laser lift-off method for severing at least one layer from a carrier comprising:
a laser that generates laser radiation; and
at least one beam splitter;
wherein
the laser radiation is divided into at least two partial beams by the at least one beam splitter,
the at least two partial beams are superimposed in an irradiation plane,
the irradiation plane is provided such that a major side of the carrier remote from the layer is arranged therein, and
an angle between the at least two partial beams at the irradiation plane is at least 1.0°, and
the laser radiation is divided by N−1 beam splitters into N partial beams according to a reflectivity R(N) of the Nth beam splitter:
R ( N )=1/( N+ 1),
wherein N is an integer of 3 to 8, and the beam splitters are arranged with increasing reflectivity along a beam path towards the irradiation plane.