Optoelectronic semiconductor chip and method for fabricating an optoelectronic semiconductor chip
View Patent ↗An optoelectronic semiconductor chip, comprising: a radiation out-coupling side ( 102, 910 ); a contact connection ( 104, 1000 ); a metal contact material ( 210, 912 ) applied to the radiation out-coupling side ( 102, 910 ) and a metal conductive connection ( 106, 500, 914 ) applied to the contact material ( 210, 912 ) and which is connected to the contact connection ( 104, 1000 ).
1. An optoelectronic semiconductor chip, comprising:
a radiation out-coupling side;
a contact connection;
a metal contact material applied to the radiation out-coupling side; and
a metal conductive connection applied to the contact material and which is connected to the contact connection,
wherein the conductive connection has a transparent conductive layer,
wherein the conductive layer includes a transparent metal oxide, and
wherein a dielectric is provided at least in certain sections between the conductive connection and the radiation out-coupling side.
2. The optoelectronic semiconductor chip as claimed in claim 1 , wherein one area of the contact material is smaller than an area of the conductive connection in projection onto the radiation out-coupling side.
3. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the contact material is distributed over the radiation out-coupling side in such a way that a optimally homogeneous current density is achieved over the semiconductor chip.
4. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the contact material comprises a number of separate contact zones.
5. The optoelectric semiconductor chip as claimed in claim 4 , wherein the contact zones are contact points.
6. The optoelectronic semiconductor chip as claimed in claim 5 , wherein the contact points have different sizes.
7. The optoelectronic semiconductor chip as claimed in claim 5 , wherein the contact points are unevenly distributed over the radiation out-coupling side.
8. An optoelectronic semiconductor chip, comprising:
a radiation out-coupling side;
a contact connection;
a metal contact material applied to the radiation out-coupling side; and
a metal conductive connection applied to the contact material and which is connected to the contact connection,
wherein the contact material comprises a number of separate contact zones,
wherein the contact zones are contact points, and
wherein the contact points have different sizes.