Process for producing indium oxide-containing layers, indium oxide-containing layers produced by the process and use thereof
View Patent ↗The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR) 2 where R=alkyl radical and/or alkoxyalkyl radical and X=F, Cl, Br or I and at least one solvent or dispersion medium is, in the sequence of points a) to d), in anhydrous atmosphere, a) applied to the substrate, b) the composition applied to the substrate is irradiated with electromagnetic radiation of wavelength ≦360 nm and c) optionally dried, and then d) converted thermally to an indium oxide-containing layer, to the layers producible by the process and to the use thereof.
1. A liquid phase process for producing an indium oxide-comprising layer, the process comprising, in an anhydrous atmosphere:
(a) applying an anhydrous composition comprising an indium halogen alkoxide and a solvent or dispersion medium to a substrate, to obtain an intermediate layer;
(b) irradiating the intermediate layer with electromagnetic radiation of wavelength ≦360 nm, to obtain an irradiated layer;
(c) optionally drying the irradiated layer; and
(d) thermally converting the irradiated layer to an indium oxide-comprising layer,
wherein the indium halogen alkoxide in the anhydrous composition has a formula (I):
InX(OR) 2 (I),
wherein:
R is at least one selected from the group consisting of an alkyl radical and an alkoxyalkyl radical; and
X is F, Cl, Br, or I.
2. The process of claim 1 , wherein, in formula (I), the alkyl or alkoxyalkyl radical is a C1-C15-alkyl or alkoxyalkyl group.
3. The process of claim 2 , wherein the indium halogen alkoxide is InCl(OMe) 2 , InCl(OCH 2 CH 2 OCH 3 ) 2 , InCl(OEt) 2 , InCl(OiPr) 2 , or InCl(OtBu) 2 .
4. The process of claim 1 , wherein the anhydrous composition further comprises at least one selected from the group consisting of an alkoxide and halogen alkoxide of a different element in dissolved or dispersed form.
5. The process of claim 1 , wherein a content of the indium halogen alkoxide the anhydrous composition is from 0.1 to 10% by weight, based on a total mass of the anhydrous composition.
6. The process of claim 1 , wherein the solvent or dispersion medium is an aprotic or weakly protic solvent or dispersion medium.
7. The process of claim 6 , wherein the solvent or dispersion medium is methanol, ethanol, isopropanol, tetrahydrofurfuryl alcohol, tert-butanol, butyl acetate, methoxyethanol, or toluene.
8. The process of claim 1 , wherein a content of the solvent or dispersion medium in the anhydrous composition is from 90 to 99.9% by weight, based on a total mass of the anhydrous composition.
9. The process of claim 1 , wherein the anhydrous composition has a viscosity of 1 mPa·s to 10 Pa·s.
10. The process of claim 1 , wherein the substrate comprises glass, silicon, silicon dioxide, a metal oxide, a transition metal oxide, a metal, or a polymeric material.
11. The process of claim 1 , wherein the application of the anhydrous composition is carried out by a printing process, a spraying process, a rotary coating process, a dipping process, or a process selected from the group consisting of meniscus coating, slit coating, slot-die coating, and curtain coating.
12. The process of claim 11 , wherein the application is effected via an inkjet printing process selected from the group consisting of continuous inkjet printing, thermal inkjet printing, and piezo inkjet printing.
13. The process of claim 1 , wherein the irradiation is carried out with electromagnetic radiation of wavelength 150-300 nm.
14. The process of claim 1 , wherein the thermal conversion is effected with temperatures greater than 150° C.
15. The process of claim 1 , further comprising before, during, or after (d):
injecting UV, IR, or VIS radiation.
16. An indium oxide-comprising layer obtained by the process of claim 1 .
17. A process for producing an electronic component, the process comprising:
forming the indium oxide-comprising layer of claim 16 on an electronic substrate,
wherein the electronic substrate is a transistor, a diode, a sensor, or a solar cell.
18. The process of claim 1 , wherein the anhydrous composition further comprises an alkoxide of at least one element selected from group consisting B, Al, Ga, Ge, Sn, Pb, P, Zn, and Sb.
19. The process of claim 1 , wherein the anhydrous composition further comprises at least one alkoxide selected from the group consisting of Ga(OiPr) 3 , Ga(OtBu) 3 , Zn(OMe) 2 , Sn(OtBu) 4 .
20. The process of claim 1 , wherein a content of the indium halogen alkoxide in the anhydrous composition is from 0.5 to 6% by weight, based on a total mass of the anhydrous composition.