IP Library Granted Patent US 9,181,135
Granted Patent B2
US 9,181,135 · App. 13/517,672 · Granted Nov 10, 2015

Composite compacts formed of ceramics and low volume cubic boron nitride and method of manufacture

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Quick Facts
Patent No.
US 9,181,135
App. No.
13/517,672
Granted
Nov 10, 2015
Kind
B2
Abstract

A composite compact formed by sintering, at high temperature/high pressure, a composition including cBN in a range of about 5 to about 60 vol. %, zirconia (or in the range about 5 to about 20 vol. %), and other ceramic material. Subsequent to sintering, the zirconia exists in the cubic phase and/or tetragonal phase. The zirconia may be either stabilized or unstabilized prior to sintering. The other ceramic material may include one or more of nitrides, borides, and carbides of Ti, Zr, Hf, Al, Si, or Al 2 O 3 . Some of the ceramic material is formed during the sintering process. The compact can be bonded to a tungsten carbide substrate during the sintering process.

Claims (32)

1. A sintered compact comprising:

cBN in a range of about 5 to about 60 vol. %; and

ceramic material having zirconium-containing phases that are present in a range of about 10 vol. % to about 15 vol. %, wherein the zirconium-containing phases are selected from a group of oxides, nitrides and borides and combinations thereof, wherein the zirconium-containing phase comprises zirconium oxides that are free of stabilizing agents and have crystal structures comprising at least one of cubic phases and tetragonal phases.

2. The sintered composite compact according to claim 1 , wherein the sintered composite compact is sintered to a substrate.

3. The sintered composite compact according to claim 1 , wherein the zirconium nitrides are made in-situ.

4. The sintered composite compact according to claim 1 , wherein the vol. % cBN is less than about 50.

5. The sintered composite compact according to claim 4 , wherein the vol. % cBN is less than about 40.

6. The sintered composite compact according to claim 1 , wherein grain size of the cBN is about 1 to about 10 microns.

7. The sintered composite compact according to the claim 1 , wherein the ceramic material is selected from the group of nitrides, borides, and carbides of Group IV, Al 2 O 3 and Si 3 N 4 and combinations thereof.

8. The sintered composite compact according to the claim 1 , wherein the ceramic material includes at least one ceramic material selected from a group of silicon nitride, aluminum nitride, and titanium nitride and combinations thereof.

9. The sintered composite compact according to claim 1 , wherein the Zirconium-containing phase is selected from the group of ZrO 2 and ZrO and combinations thereof.

10. A method of making a composite compact comprising subjecting, to a high temperature/high pressure process, a composition comprising cBN in a range of about 5 to about 60 vol. %, zirconia in a range of about 10 vol. % to about 20 vol. %, and other ceramic material; wherein the composition is free of zirconia-stabilizing agents and the zirconia is in a monoclinic phase prior to sintering, and wherein all volume percent listings are based on total vol. % prior to the high temperature/high pressure process.

11. The method of claim 10 , further comprising bonding the compact to a substrate.

12. The method according to claim 11 , wherein the substrate comprises tungsten carbide.

13. The method according to claim 10 , wherein the vol. % cBN is less than about 50.

14. The method of claim 13 , wherein the vol. % cBN is less than about 40.

15. The method according to claim 10 , wherein the other ceramic material is selected from the group of nitrides, borides, and carbides of Group IV, Al 2 O 3 and Si 3 N 4 and combinations thereof.

16. The method according to claim 10 , further comprising Al or aluminum alloy in an amount of about 2.5 to about 15 vol. %.

17. The method according to claim 16 , wherein the Al or aluminum alloy is in a range of about 5 to about 10 vol. %.

18. The method according to claim 17 wherein the aluminum alloy comprises NiA 1 3 .

19. The method according to claim 10 , wherein the other ceramic material includes at least one selected from the group of silicon nitride, aluminum nitride, and titanium nitride and combinations thereof.

20. The method according to claim 10 , wherein the zirconia particle size is in the range of about 2 to about 3 microns.

21. A method of making a composite compact comprising the step of subjecting, to a high temperature/high pressure process, a composition comprising cBN in a range of about 25 to about 60 vol. %, unstabilized zirconia in a range of about 5 to about 20 vol. %, and other ceramic material, the composition being free of zirconia-stabilizing agent; wherein, prior to the high temperature/high pressure process, the unstabilized zirconia is in the monoclinic phase, and wherein all volume percent listings are based on total vol. %.

22. A method of making a composite compact comprising the steps of:

mixing a composition comprising zirconia, Al and optionally cBN, and/or TiN, the composition being free of zirconia-stabilizing agent; and reacting, under HPHT conditions, zirconia, Al and optionally cBN, and/or TiN, to form zirconium diboride, aluminum nitride and/or zirconium nitride and/or titanium diboride and/or aluminum oxide and/or other zirconium oxide phases.

23. The sintered compact according to claim 1 , wherein the vol. % cBN is less than about 22.

24. The sintered compact according to claim 1 , wherein the zirconium oxides have crystal structures that comprise both cubic phases and tetragonal phases.

25. The sintered compact according to claim 1 , wherein the zirconium oxides have crystal structures that further comprise monoclinic phase.

26. The method according to claim 10 , wherein following subjecting the composition to the high temperature/high pressure process, the composite compact comprises zirconium oxides that have crystal structures comprising at least one of cubic phases and tetragonal phases.

27. The method according to claim 26 , wherein the zirconium oxides have crystal structures that comprise both cubic phases and tetragonal phases.

28. The method according to claim 21 , wherein following subjecting the composition to the high temperature/high pressure process, the composite compact comprises zirconium oxides that have crystal structures comprising at least one of cubic phases and tetragonal phases.

29. The method according to claim 22 , wherein following subjecting the composition to the HPHT process, the composite compact comprises zirconium oxides that have crystal structures comprising at least one of cubic phases and tetragonal phases.

Assignments (6)
SECURITY INTEREST Recorded Aug 31, 2021
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 057388/0971 →
2L PATENT SECURITY RELEASE AGREEMENT Recorded Aug 31, 2021
From: UBS AG, STAMFORD BRANCH
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 057650/0602 →
1L PATENT SECURITY RELEASE AGREEMENT Recorded Aug 31, 2021
From: UBS AG, STAMFORD BRANCH
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 057651/0040 →
FIRST LIEN PATENT SECURITY AGREEMENT Recorded Sep 4, 2019
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 050272/0415 →
SECOND LIEN PATENT SECURITY AGREEMENT Recorded Sep 4, 2019
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 050272/0472 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 18, 2012
From: MALIK, ABDS-SAMI; PALMER, JACOB SETH
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 028389/0739 →