Optoelectronic semiconductor chip and use of an intermediate layer based on AlGaN
View Patent ↗An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa1-xN-based intermediate layer where 0<x≦1, which is situated at a same side of the active zone as the n-doped layer sequence.
1. An optoelectronic semiconductor chip comprising:
an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN,
a p-doped layer sequence,
an n-doped layer sequence,
an active zone that generates an electromagnetic radiation, is situated between the p-doped layer sequence and the n-doped layer sequence, and is penetrated by an electrical plated-through hole, and
at least one Al x Ga 1-x N-based intermediate layer where 0≦x≦1, which is situated at a same side of the active zone as the n-doped layer sequence,
wherein at least one of a) or b) is present:
a) the intermediate layer has elevations extending into cracks and/or holes in a layer of the semiconductor layer sequence that adjoins the intermediate layer, wherein the elevations at least in places are in direct contact with boundary areas of the cracks and/or holes and at least some or all of the cracks and/or holes are completely covered by the intermediate layer,
b) the intermediate layer reduces a size of the cracks and/or holes along a growth direction of the semiconductor layer sequence, wherein at least one portion of the cracks and/or holes extends on both sides of the intermediate layer.
2. The optoelectronic semiconductor chip according to claim 1 ,
wherein a specific chemical permeability of the intermediate layer relative to liquids is less than for layers of the semiconductor layer sequence that adjoin the intermediate layer, and/or
wherein the intermediate layer is impermeable to liquid chemicals.
3. The optoelectronic semiconductor chip according to claim 1 ,
wherein a dopant concentration of the intermediate layer or of one of the intermediate layers is 4×10 18 per cm 3 to 5×10 19 per cm 3 and a dopant is Si.
4. The optoelectronic semiconductor chip according to claim 1 ,
wherein the intermediate layer or one of the intermediate layers is undoped.
5. The optoelectronic semiconductor chip according to claim 1 ,
wherein 0.03≦x≦0.5,
and which comprises exactly one or exactly two of the intermediate layers.
6. The optoelectronic semiconductor chip according to claim 1 ,
wherein the intermediate layer has a thickness of 15 nm to 250 nm.
7. The optoelectronic semiconductor chip according to claim 1 ,
wherein the intermediate layer or at least one of the intermediate layers is an uninterrupted, continuous layer.
8. The optoelectronic semiconductor chip according to claim 1 ,
further comprising at least two of the intermediate layers and a GaN-based current spreading layer of the n-doped layer sequence, wherein the GaN-based current spreading layer is n-doped at least with a dopant concentration of 5×10 18 per cm 3 , and wherein the GaN-based current spreading layer is situated between two of the intermediate layers and directly adjoins the latter.
9. The optoelectronic semiconductor chip according to claim 1 ,
wherein a side of the semiconductor layer sequence that faces away from the active zone, on a same side of the active zone as the n-doped layer sequence, has a roughening having an average roughness of 0.4 μm to 4.0 μm.
10. The optoelectronic semiconductor chip according to claim 1 ,
comprising at least two of the intermediate layers and further comprising an electrical plated-through hole that penetrates through one of the intermediate layers and a further one of the intermediate layers is uninterrupted and continuous.
11. The optoelectronic semiconductor chip according to claim 1 ,
wherein a total thickness of the semiconductor layer sequence is 1.0 μm to 10.0 μm.
12. The optoelectronic semiconductor chip according to claim 1 ,
comprising electrical contact-connections that energize the semiconductor chip which are all situated at a side of the p-doped layer sequence that faces away from the active zone.
13. An optoelectronic semiconductor chip comprising:
an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN,
a p-doped layer sequence,
an n-doped layer sequence,
an active zone that generates an electromagnetic radiation, is situated between the p-doped layer sequence and the n-doped layer sequence, and the n-doped layer sequence,
at least one Al x Ga 1-x N-based intermediate layer where 0<x≦1, which is situated at a same side of the active zone as the n-doped layer sequence,
wherein at least one of a) or b) is present:
a) the intermediate layer has elevations extending into cracks and/or holes in a layer of the semiconductor layer sequence that adjoins the intermediate layer, wherein the elevations at least in places are in direct contact with boundary areas of the cracks and/or holes and at least some or all of the cracks and/or holes are completely covered by the intermediate layer,
b) the intermediate layer reduces a size of the cracks and/or holes along a growth direction of the semiconductor layer sequence, wherein at least one portion of the cracks and/or holes extends on both sides of the intermediate layer, and
another intermediate layer and a GaN-based current spreading layer of the n-doped layer sequence, wherein the GaN-based current spreading layer is n-doped at least with a dopant concentration of 5×10 18 per cm 3 , and wherein the GaN-based current spreading layer is situated between two of the intermediate layers and directly adjoins the latter.
14. An optoelectronic semiconductor chip comprising:
an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN,
a p-doped layer sequence,
an n-doped layer sequence,
an active zone that generates an electromagnetic radiation, is situated between the p-doped layer sequence and the n-doped layer sequence,
at least one Al x Ga 1-x N-based intermediate layer where 0<x≦1, which is situated at a same side of the active zone as the n-doped layer sequence,
wherein at least one of a) or b) is present:
a) the intermediate layer has elevations extending into cracks and/or holes in a layer of the semiconductor layer sequence that adjoins the intermediate layer, wherein the elevations at least in places are in direct contact with boundary areas of the cracks and/or holes and at least some or all of the cracks and/or holes are completely covered by the intermediate layer,
b) the intermediate layer reduces a size of the cracks and/or holes along a growth direction of the semiconductor layer sequence, wherein at least one portion of the cracks and/or holes extends on both sides of the intermediate layer, and
another intermediate layer and an electrical plated-through hole that penetrates through one of the intermediate layers and a further one of the intermediate layers is uninterrupted and continuous.