Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device

1. A method of manufacturing a bipolar diode having a drift layer of a first conductivity type on a cathode side and an anode layer of a second conductivity type on an anode side opposite to the cathode side, the anode layer including an anode contact layer and an anode buffer layer, wherein the second conductivity type is different from the first conductivity type, the method comprising the following manufacturing steps in the following order:

(a) providing a low-doped wafer of the first conductivity type, the wafer having a first side and a second side opposite to the first side, wherein part of the wafer of unamended doping concentration in the finalized diode forms the drift layer;

(b) applying first ions to the wafer on the second side;

(c) diffusing the first ions into the wafer up to a first depth;

(d) applying second ions to the wafer on the second side;

(e) creating the anode buffer layer by diffusing the first and second ions into the wafer such that a total doping concentration is achieved between 8.0*10 15 and 2.0*10 16 cm −3 cm in a second depth of 5 μm and between 1.0*10 14 up to 5.0*10 14 cm −3 in a third depth of 15 μm;

(f) applying third ions to the wafer on the second side; and

(g) creating the anode contact layer by diffusing the third ions into the wafer up to a fourth depth of at most 5 μm,

wherein all depths are measured from the second side.

2. The method according to claim 1 , comprising:

diffusing the first ions in step (c) up to a first depth of at least 13 μm.

3. The method according to claim 1 , comprising:

diffusing the third ions in step (g) such that a maximum doping concentration of the anode contact layer between 1.0*10 17 cm −3 and 5.0*10 18 cm −3 achieved.

4. The method according to claim 1 , comprising:

diffusing the third ions in step (g) into the wafer up to a fourth depth between 0.5 and 3 μm.

5. The method according to claim 1 , comprising:

diffusing the first and second ions in step (e) such that a total doping concentration between 1.0*10 16 and 2.0*10 16 cm −3 is achieved in the second depth.

6. The method according to claim 1 , comprising:

diffusing the first ions in step (c) into the wafer up to a fifth depth between 18 and 25 μm.

7. The method according to claim 1 , comprising:

creating a defect layer by irradiation in a sixth depth of at most 8 μm.

8. The method according to claim 1 , comprising:

creating a defect layer by irradiation in a sixth depth between 5 and 7 μm.

9. The method according to claim 1 , comprising:

applying the first and second ions in steps (b) and (d) with a first and second implant dose, wherein the sum of the first and second implant dose is between 3*10 12 cm −2 and 15*10 12 cm −2 .

10. The method according to claim 1 , comprising:

applying the first and second ions in steps (b) and (d) with a first and second implant dose, wherein the implant dose of the first ions is lower than the implant dose of the second ions.

11. The method according to claim 1 , comprising:

diffusing the first ions in step (c) for a first diffusion time; and

diffusing the first and second ions in step (e) for a second diffusion time,

wherein the first diffusion time is longer than the second diffusion time.

12. The method according to claim 1 , comprising:

applying the same ions as the first and second ions.

13. The method according to claim 1 , wherein the first depth in step (c) is at most 16 μm.

14. A bipolar diode having a drift layer of a first conductivity type on a cathode side and an anode layer of a second conductivity type on an anode side, the second conductivity type being different from the first conductivity type, and the cathode side being opposite to the anode side,

wherein the anode layer comprises a diffused anode contact layer and a diffused anode buffer layer,

wherein the anode contact layer is arranged up to a depth of at most 5 μm,

wherein the anode buffer layer has a doping concentration between 8.0*10 15 and 2.0*10 16 cm −3 in a depth of 5 μm and between 1.0*10 14 up to 5.0*10 14 cm −3 in a depth of 15 μm, and

wherein all depths are measured from the anode side.

15. The diode according to claim 14 , wherein the anode buffer layer is arranged in a depth up to between 18 and 25 μm.

16. The method according to claim 12 , wherein the first and second ions include one of B, Al or Ga ions.

17. The method according to claim 3 , comprising:

diffusing the third ions in step (f) into the wafer up to a fourth depth between 0.5 and 3 μm.

18. The method according to claim 3 , comprising:

diffusing the first and second ions in step (e) such that a total doping concentration between 1.0*10 16 and 2.0*10 16 cm −3 is achieved in the second depth.

19. The method according to claim 5 , comprising:

applying the first and second ions in steps (b) and (d) with a first and second implant dose, wherein the sum of the first and second implant dose is between 3*10 12 cm −2 and 15*10 12 cm −2 .

20. The method according to claim 9 , comprising:

applying the first and second ions in steps (b) and (d) with a first and second implant dose, wherein the implant dose of the first ions is lower than the implant dose of the second ions.

21. The method according to claim 13 , wherein the first depth in step (c) is at most 15 μm.

22. The method according to claim 10 , comprising:

diffusing the first ions in step (c) for a first diffusion time; and

diffusing the first and second ions in step (e) for a second diffusion time,

wherein the first diffusion time is longer than the second diffusion time.