Threshold voltage based power transistor operation
View Patent ↗A system and method for operating a power transistor. Parasitic impedances naturally present in a circuit board or other interconnect structures exhibit a parasitic impedance effective to generate a parasitic voltage signal in response to operating the power transistor. The parasitic voltage signal is monitored in order to better control the power transistor. In particular, the threshold voltage of the power transistor can be determined and used to more optimally control the power transistor.
1. A system for operating a power transistor, said system comprising:
said power transistor that defines a gate contact, a collector contact, and an emitter contact, said power transistor characterized as having a threshold voltage;
a circuit board that defines a control signal path electrically coupled to the gate contact, an input signal path electrically coupled to the collector contact, and an output signal path electrically coupled to the emitter contact, wherein said output signal path is characterized as having a parasitic impedance effective to generate a parasitic voltage signal in response to operating the power transistor; and
a controller electrically connected to the circuit board in a manner effective to determine a parasitic voltage value based on the parasitic voltage signal, said controller configured to output a control signal effective to operate the power transistor based on the parasitic voltage value.
2. The system in accordance with claim 1 , wherein the controller is further configured to determine said threshold voltage of the power transistor based on the parasitic voltage value and a control signal value.
3. The system in accordance with claim 1 , wherein the parasitic impedance includes an inductance.
4. The system in accordance with claim 1 , wherein the parasitic voltage value is indicative of a rate of change of a collector current.
5. The system in accordance with claim 1 , wherein the output signal path includes a first contact and a second contact spaced electrically apart from the first contact by a portion of the output signal path, and the parasitic impedance is determined by the portion therebetween.
6. The system in accordance with claim 5 , wherein the first contact is characterized as being electrically close to the emitter contact.
7. The system in accordance with claim 5 , wherein the portion does not include an electrical component.
8. The system in accordance with claim 1 , wherein the system further comprises a threshold detector configured to indicate when the parasitic voltage value is greater than a turn-on threshold value.
9. The system in accordance with claim 1 , wherein the system further comprises a threshold detector configured to indicate when the parasitic voltage value is less than a turn-off threshold value.
10. The system in accordance with claim 1 , wherein the system further comprises a rate of change detector configured to indicate when the rate of change of the parasitic voltage value is greater than a turn-on threshold rate value.
11. The system in accordance with claim 1 , wherein the system further comprises a rate of change detector configured to indicate when the rate of change of the parasitic voltage value is less than a turn-off threshold rate value.
12. A method for operating a power transistor, said method comprising:
providing said power transistor that defines a gate contact, a collector contact, and an emitter contact, said power transistor characterized as having a threshold voltage;
providing a circuit board that defines a control signal path electrically coupled to the gate contact, an input signal path electrically coupled to the collector contact, and an output signal path electrically coupled to the emitter contact, wherein the output signal path is characterized as having a parasitic impedance effective to generate a parasitic voltage signal in response to operating the power transistor;
determining a parasitic voltage value based on the parasitic voltage signal when the power transistor is operated in response to a control signal; and
operating the power transistor based on the parasitic voltage value.
13. The method in accordance with claim 12 , wherein the method further comprises indicating when the parasitic voltage value is greater than a turn-on threshold value.
14. The method in accordance with claim 12 , wherein the method further comprises indicating when the parasitic voltage value is less than a turn-off threshold value.
15. The method in accordance with claim 12 , wherein the parasitic voltage value corresponds to a rate of change of the parasitic voltage signal.
16. The method in accordance with claim 12 , wherein the method further comprises determining said threshold voltage of the power transistor based on the parasitic voltage value and a control signal value.