Optoelectronic device with enhanced efficiency and method of use
View Patent ↗A compound III/V optoelectronic device and method associated with such a device is disclosed. In one aspect, a method for an improved III/V compound optoelectronic device is disclosed. The method comprises applying a sulfur surfactant on the III/V compound optoelectronic device to improve passivation of the III/V compound optoelectronic device. In a second aspect, a III/V compound optoelectronic device is disclosed. The III/V compound optoelectronic device comprises a thin film device with a III/V compound semiconductor absorbing material, and a sulfur surfactant on the III/V compound thin film device to improve passivation of the III/V compound optoelectronic device.
1. A method for an improved III/V optoelectronic device comprising:
applying a sulfur surfactant to exposed edges of the III/V optoelectronic device to improve passivation of the III/V optoelectronic device;
wherein the exposed edges are created by cracks in, or intentional fracturing of, the III/V optoelectronic device.
2. The method of claim 1 wherein the sulfur surfactant comprises an inert, transparent and insulating viscous liquid with sulfur in a −2 oxidation state.
3. The method of claim 1 , wherein the sulfur surfactant is applied to the front and/or rear surfaces of the III/V optoelectronic device.
4. The method of claim 1 , wherein the cracks are formed after the surfactant is applied.
5. The method of claim 1 , wherein the surfactant is trioctylphosphine sulfide (TOP:S), SP(C 8 H 17 ) 3 .