Semiconductor device and flat panel display including the same
View Patent ↗A semiconductor device includes a semiconductor layer on a substrate, a gate electrode electrically insulated from the semiconductor layer by a gate insulating layer, an insulating layer on the gate insulating layer and on the gate electrode, and a source electrode and a drain electrode on the insulating layer, the source and drain electrode being connected to the semiconductor layer. The source electrode overlaps at least a part of the gate electrode. The source electrode, the insulating layer, and the gate electrode overlap each other so as to provide a capacitor.
1. A semiconductor device, comprising:
a U-shaped semiconductor layer on a substrate;
a gate electrode electrically insulated from the semiconductor layer by a gate insulating layer;
an insulating layer on the gate insulating layer and on the gate electrode; and
a source electrode and a drain electrode on the insulating layer, the source and drain electrode being connected to the semiconductor layer, the semiconductor layer, the gate electrode, the source electrode, and the drain electrode being configured to provide a plurality of thin film transistors connected in series or in parallel, the gate electrode being a common gate electrode to the plurality of thin film transistors, and the source electrode overlapping at least a part of the common gate electrode in each of the plurality of thin film transistors, wherein the source electrode, the insulating layer, and the common gate electrode overlap each other so as to provide a capacitor integrated with the thin film transistors,
wherein:
the U-shaped semiconductor layer comprises two legs with free ends,
one of the free ends is interconnected with the drain electrode by one contact hole, and
another one of the free ends is interconnected with the drain electrode by one contact hole and a base section of the semiconductor layer is contacted to the source electrode by three contact holes.
2. The semiconductor device as claimed in claim 1 , wherein:
the insulating layer includes contact holes that expose the semiconductor layer, and
the source and drain electrodes are connected to the semiconductor layer through the contact holes.
3. A flat panel display (FPD), comprising:
a first thin film transistor (TFT) connected to a scan line and a data line;
a second TFT connected to the first TFT, the second TFT being configured as a plurality of second TFTs connected in series or in parallel; and
a light emitting element connected to the second TFT,
wherein the second TFT includes:
a U-shaped semiconductor layer on a substrate;
a gate electrode electrically insulated from the semiconductor layer by a gate insulating layer, the gate electrode being a common gate electrode to the plurality of second TFTs;
an insulating layer on the gate insulating layer and on the gate electrode; and
a source electrode and a drain electrode on the insulating layer, the source electrode and the drain electrode being connected to the semiconductor layer, and the source electrode overlapping at least a part of the common gate electrode, wherein the source electrode, the insulating layer, and the common gate electrode overlap each other so as to provide a capacitor integrated with the second TFT,
wherein:
the U-shaped semiconductor layer comprises two legs with free ends,
one of the free ends is interconnected with the drain electrode by one contact hole, and
another one of the free ends is interconnected with the drain electrode by one contact hole and a base section of the semiconductor layer is contacted to the source electrode by three contact holes.
4. The FPD as claimed in claim 3 , wherein:
the insulating layer includes contact holes that expose the semiconductor layer, and
the source and drain electrodes are connected to the semiconductor layer through the contact holes.
5. The FPD as claimed in claim 3 , wherein:
the source electrode of the second TFT is connected to a power source voltage, and
the drain electrode of the second TFT is connected to the light emitting element.
6. The FPD as claimed in claim 5 , wherein:
the light emitting element includes an anode electrode, an organic light emitting layer, and a cathode electrode, and
the anode electrode is connected to the drain electrode of the second TFT.
7. A flat panel display (FPD), comprising:
a first thin film transistor (TFT) connected to a scan line and a data line;
a second TFT connected to the first TFT, the second TFT being configured as a plurality of second TFTs connected in series or in parallel; and
a light emitting element connected to the second TFT,
wherein the second TFT includes:
a U-shaped semiconductor layer on a substrate;
a gate electrode electrically insulated from the semiconductor layer by a gate insulating layer, the gate electrode being a common gate electrode to the plurality of second TFTs;
an insulating layer on the gate insulating layer and on the gate electrode; and
a source electrode and a drain electrode on the insulating layer, the source electrode and the drain electrode being connected to the semiconductor layer, and the source electrode overlapping at least a part of the common gate electrode, wherein the source electrode, the insulating layer, and the common gate electrode overlap each other so as to provide a capacitor integrated with the second TFT,
wherein:
the source electrode of the second TFT is connected to a power source voltage,
the drain electrode of the second TFT is connected to the light emitting element,
the light emitting element includes an anode electrode, an organic light emitting layer, and a cathode electrode,
the anode electrode is connected to the drain electrode of the second TFT,
the FPD further includes a pixel defining layer including an aperture,
the organic light emitting layer is on the anode electrode and in the aperture of the pixel defining layer, and
the cathode electrode is on the organic light emitting layer.