Array substrate and method for manufacturing the same
Disclosed herein is a method for manufacturing an array substrate. The method includes forming a source electrode and a drain electrode on a substrate. A semiconductor layer, an organic insulating layer, and a gate electrode layer are sequentially formed to cover the substrate, the source electrode, and the drain electrode. A patterned photoresist layer is formed on the gate electrode layer. The exposed portion of the gate electrode layer, and a portion of the organic insulative layer and a portion of the semiconductor layer thereunder are removed to form a gate electrode. An organic passivation layer is formed on the gate electrode, the source electrode, and the drain electrode. The organic passivation layer has a contact window to expose a portion of the drain electrode. A pixel electrode is formed on the organic passivation layer and the exposed portion of the drain electrode.
1. An array substrate, comprising:
a substrate including a rigid substrate; and a flexible polymer layer fully covering the rigid substrate;
a source electrode and a drain electrode disposed on the substrate, wherein the source electrode and the drain electrode are disposed on the flexible polymer layer;
a semiconductor layer disposed on the source electrode, the drain electrode and the substrate;
an organic insulating layer disposed on the semiconductor layer, wherein a sidewall of the semiconductor layer is continuous with a sidewall of the organic insulating layer;
a gate electrode disposed on the organic insulating layer, wherein an area of the gate electrode is less than an area of the organic insulating layer, and the sidewall of the organic insulating layer is not continuous with a sidewall of the gate electrode;
an organic passivation layer covering the gate electrode, the source electrode, the drain electrode and the substrate, wherein the organic passivation layer has a contact window to expose a portion of the drain electrode; and
a pixel electrode disposed on the organic passivation layer and electrically connected to the drain electrode through the contact window.
2. The array substrate of claim 1 , wherein the semiconductor layer comprises a material selected from the group consisting of ZnO, ZuSnO, CdSnO, GaSnO, TiSnO, InGaZnO, CuAlO, SrCuO and LaCuOS.
3. The array substrate of claim 1 , wherein the organic insulating layer comprises polyimide or polysiloxane.
4. The array substrate of claim 1 , wherein the organic passivation layer comprises polyimide or polysiloxane.
5. The array substrate of claim 1 , wherein the substrate comprises a flexible polymer layer made of polyimide, polyethylene terephthalate, polyethylene naphthalate or poly(methyl methacrylate).