IP Library Granted Patent US 10,029,916
Granted Patent B2
US 10,029,916 · App. 13/530,822 · Granted Jul 24, 2018

Metal nanowire networks and transparent conductive material

Inventors: Ajay Virkar (Mountain View, CA); Ying-Syi Li (Fremont, CA); Melburne C. LeMieux (San Jose, CA)
Assignee: C3Nano Inc.
B82Y30/00H05K1/097H05K3/1283H05K2201/0108H05K2201/026
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Quick Facts
Patent No.
US 10,029,916
App. No.
13/530,822
Granted
Jul 24, 2018
Kind
B2
Abstract

Metal nanowires, such as silver nanowires coated on a substrate were fused together to form fused metal nanowire networks that have greatly improved conductivity while maintaining good transparency. Materials formed form the fused metal nanowire networks described herein can have a transparency to visible light of at least about 85% and a sheet resistance of no more than about 100 Ohms/square or a transparency to visible light of at least about 90% and a sheet resistance of no more than about 250 Ohms/square. The method of forming such a fused metal nanowire networks are disclosed that involves exposure of metal nanowires to various fusing agents on a short timescale. When formed into a film, materials comprising the metal nanowire network demonstrate low sheet resistance while maintaining desirably high levels of optical transparency, making them suitable for transparent electrode formation.

Claims (17)

1. A material comprising a transparent conductive coating and a substrate on which the coating is supported, the coating comprising a fused elemental metal nanowire network, wherein the material has a transmittance for visible light of at least 90% and the transparent conductive coating has a sheet resistance of no more than 100 Ohms/square.

2. The material of claim 1 wherein the metal nanowires fused to form the fused metal nanowire network have an aspect ratio from about 50 to about 5000 and a diameter of no more than about 250 nm.

3. The material of claim 1 wherein the metal nanowires fused to form the fused metal nanowire network have an aspect ratio from about 100 to about 2000 and a diameter from about 10 nm to about 120 nm.

4. The material of claim 1 wherein the fused metal nanowire network comprises silver, copper, gold, indium, tin, iron, titanium, platinum, palladium, nickel, cobalt, an alloy, or combination thereof.

5. The material of claim 1 wherein the fused metal nanowire network comprises silver.

6. The material of claim 1 wherein the fused metal nanowire network on the substrate has a surface loading level that is about 0.1 μg/cm 2 to about 5 mg/cm 2 .

7. The material of claim 1 wherein the substrate comprises glass, polymer, inorganic semiconducting material, inorganic dielectric material, laminates thereof, composites thereof or combinations thereof.

8. The material of claim 7 wherein the polymer comprises polyethylene terephthalate (PET), polyacrylate, polyolefin, polyvinyl chloride, fluoropolymer, polyamide, polyimide, polysulfone, polysiloxane, polyetheretherketone, polynorbornene, polyester, polyvinyl alcohol, polyvinyl acetate, acrylonitrile-butadiene-styrene copolymer, polycarbonate, a copolymer thereof or blend thereof.

9. The material of claim 1 further comprising a polymer film overcoat.

10. The material of claim 1 having a sheet resistance of no more than 75 ohm/sq.

11. A device comprising at least one transparent electrode having a transparent conductive material comprising a fused metal nanowire network of claim 1 .

12. The material of claim 1 wherein the fused metal nanowire network on the substrate has a surface loading level that is about 1 μg/cm 2 to about 1 mg/cm 2 .

13. The material of claim 1 having a sheet resistance of no more than 60 ohm/sq.

14. The material of claim 1 wherein the fused metal nanowire network comprise silver and wherein the substrate comprises polymer.

15. The material of claim 14 further comprising a polymer film overcoat.

16. The material of claim 1 wherein the fused metal nanowire network comprises gold, copper, or a combination thereof.

17. The material of claim 1 wherein the material has a transmittance for visible light of at least 90.5%.

Assignments (12)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2024
From: C3 NANO, INC.
To: EKC TECHNOLOGY, INC.
Reel/Frame 069719/0206 →
RELEASE OF SECURITY INTEREST Recorded Oct 11, 2024
From: GALLAGHER IP SOLUTIONS LLC
To: C3 NANO, INC.
Reel/Frame 068877/0619 →
SECURITY INTEREST Recorded Sep 2, 2023
From: C3 NANO, INC.
To: NEWLIGHT CAPITAL LLC
Reel/Frame 064803/0902 →
SECURITY INTEREST Recorded Jul 16, 2022
From: C3 NANO, INC.
To: NEWLIGHT CAPITAL LLC, AS SERVICER
Reel/Frame 060680/0217 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 9, 2022
From: VIRKAR, AJAY
To: C3 NANO, INC.
Reel/Frame 060152/0890 →
SHORT FORM INTELLECTUAL PROPERTY SECURITY AGREEMENT Recorded Mar 5, 2021
From: C3 NANO, INC.
To: NEWLIGHT CAPITAL LLC
Reel/Frame 055592/0145 →
RELEASE OF SECURITY INTEREST Recorded Feb 23, 2021
From: PALM TREE CAPITAL MANAGEMENT, LP, AS COLLATERAL AGENT
To: C3 NANO, INC.
Reel/Frame 055379/0621 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 17, 2021
From: LI, YING-SYI
To: C3 NANO, INC.
Reel/Frame 055281/0333 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 16, 2021
From: LEMIEUX, MELBURNE C.
To: C3 NANO, INC.
Reel/Frame 055274/0326 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 16, 2021
From: VIRKAR, AJAY
To: C3 NANO, INC.
Reel/Frame 055274/0952 →
SECURITY INTEREST Recorded Jan 21, 2021
From: C3 NANO, INC.
To: PALM TREE CAPITAL MANAGEMENT, LP, AS COLLATERAL AGENT
Reel/Frame 055060/0840 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 21, 2013
From: VIRKAR, AJAY; LI, YING-SYI; LEMIEUX, MELBURNE C.
To: C3NANO INC.
Reel/Frame 030660/0656 →
Continuity (1)
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