Granted Patent B1

US 8,565,049 · App. 13/533,150 · Granted Oct 22, 2013

Abstract

Claims (33)

1. A method for providing a near-field transducer (NFT) for an energy assisted magnetic recording (EAMR) transducer the method comprising:

forming an NFT having a disk and a pin;

depositing a dielectric layer substantially covering the NFT;

removing a portion of the dielectric layer such that dielectric layer has an aperture therein, the aperture exposing the pin; and

annealing the EAMR transducer at a temperature greater than an expected operating temperature of the EAMR transducer.

2. The method of claim 1 wherein the temperature is greater than 150° C.

3. The method of claim 2 wherein the temperature is not more than 200° C.

4. The method of claim 1 wherein the step of annealing the EAMR transducer further includes:

annealing the EAMR transducer at the temperature for at least one hour and not more than sixteen hours.

5. The method of claim 1 wherein EAMR transducer is one of a plurality of EAMR transducers on a substrate and wherein the step of annealing the EAMR transducer further includes

annealing the substrate at the temperature such that the plurality of transducers is annealed.

6. The method of claim 5 further comprising:

dividing the substrate into a plurality of row bars, the EAMR transducer residing on a row bar of the plurality of row bars;

lapping the row bar;

annealing the row bar such that a portion of the pin protrudes from a lapped surface; and

removing the portion of the pin of the NFT after the step of annealing the row bar.

7. The method of claim 6 wherein the step of removing the portion of the pin further includes:

performing an additional lapping of the row bar.

8. The method of claim 1 a portion of the pin protrudes at least into the aperture after the annealing step.

9. The method of claim 8 further comprising:

removing the portion of the pin.

10. The method of claim 8 wherein the step of removing the pin further includes:

lapping the EAMR transducer.

11. The method of claim 1 wherein the step of removing the portion of the dielectric layer further includes:

ion milling at least the portion of the dielectric layer.

12. The method of claim 1 wherein the EAMR transducer resides on a row bar including at least one additional EAMR transducer, the method further comprising:

annealing the row bar such that a portion of the pin protrudes; and

lapping the row bar such that the portion of pin is removed.

13. An EAMR transducer having an air-bearing surface (ABS) configured to reside in proximity to a media during operation, the EAMR transducer comprising:

a near field transducer (NFT) for focusing the energy onto the region of the media, the NFT having a disk and a pin proximate to the ABS, the pin protruding not more than one nanometer during operation of the EAMR transducer;

a write pole configured to write to a region of the media; and

at least one coil for energizing the write pole.

14. The EAMR transducer of claim 13 wherein the pin protrudes not more than one-half nanometer during operation of the EAMR transducer.

Assignments (9)