Low power phase change memory cell
A memory may include two electrodes and phase change material having an amorphous reset state and a partially crystalized set state, coupled between the two electrodes. The phase change material in the set state may have a highly nonlinear current-voltage response in a subthreshold voltage region. The phase change material may be an alloy of indium, antimony, and tellurium.
1. A memory comprising:
two electrodes; and
phase change material having an amorphous reset state and a partially crystalized set state, the phase change material being coupled between the two electrodes;
wherein the phase change material in the set state has a highly nonlinear current-voltage response in a subthreshold voltage region.
2. The memory of claim 1 , wherein the phase change material comprises indium, germanium and tellurium.
3. The memory of claim 1 , wherein the phase change material comprises indium, antimony, and tellurium.
4. The memory of claim 1 , wherein the phase change material in the set state has a resistance of more than about 200 kΩ if the voltage between the two electrodes is less than about 1.5 V.
5. The memory of claim 1 , wherein a current of less than about 1 μA flows through the phase change material in the set state if the voltage between the two electrodes is less than about 1.5 V.
6. The memory of claim 1 , wherein a resistance of the phase change material in the set state reduces by more than an order of magnitude if a voltage across the two electrodes is increased to a threshold voltage.
7. The memory of claim 1 , wherein a pulse of current of less than about 200 μA through the phase change material, for less than about 100 ns, changes the phase change material from the set state to the reset state.
8. The memory of claim 1 , wherein the subthreshold voltage region comprises voltage levels between about 0 V and about 2 V.
9. The memory of claim 1 , further comprising an access device, coupled between a control line and one of the two electrodes.
10. The memory of claim 9 , wherein the access device is an ovonic threshold switch or a semiconductor diode.
11. A system comprising:
a processor to generate memory control commands; and
at least one memory, coupled to the processor, to respond to the memory control commands, the at least one memory comprising:
two electrodes; and
phase change material having an amorphous reset state and a partially crystalized set state, the phase change material being coupled between the two electrodes;
wherein the phase change material in the set state has a highly nonlinear current-voltage response in a subthreshold voltage region.
12. The system of claim 11 , wherein the phase change material comprises indium, antimony, and tellurium.
13. The system of claim 11 , wherein the phase change material in the set state has a resistance of more than about 200 kΩ if the voltage between the two electrodes is less than about 1.5 V.
14. The system of claim 11 , wherein a resistance of the phase change material in the set state reduces by more than an order of magnitude if a voltage across the two electrodes is increased to a threshold voltage.
15. The system of claim 11 , wherein a pulse of current of less than about 200 μA through the phase change material, for less than about 100 ns, changes the phase change material from the set state to the reset state.
16. The system of claim 11 , wherein the subthreshold voltage region comprises voltage levels between about 0 V and about 2 V.
17. The system of claim 11 , the at least one memory further comprises an access device, coupled between a control line and one of the two electrodes.
18. The system of claim 17 , wherein the access device is an ovonic threshold switch or a semiconductor diode.
19. The system of claim 11 , further comprising;
I/O circuitry, coupled to the processor, to communicate with an external device.
20. A memory element comprising:
two electrodes; and
phase change material having an amorphous reset state and a partially crystalized set state, coupled between the two electrodes;
wherein the phase change material, by atomic percentage, comprises
between about 25% and about 40% indium (In);
between about 1% and about 15% antimony (Sb); and
between about 50% and about 70% tellurium (Te).
21. The memory element of claim 20 , further comprising an access device, coupled between a control line and one of the two electrodes.
22. The memory element of claim 21 , wherein the access device is an ovonic threshold switch or a semiconductor diode.