Granted Patent B2

US 8,716,107 · App. 13/536,043 · Granted May 6, 2014

Abstract

Claims (23)

1. A method for forming a thin film material for at least one of a solar device, a semiconductor device, and an electronic device during an epitaxial lift off process, comprising:

forming an epitaxial material over a sacrificial layer on a substrate;

adhering a support handle onto the epitaxial material, wherein the support handle comprises a wax film having a varying thickness, and wherein the thickness varies linearly;

removing the sacrificial layer during an etching process; and

peeling the epitaxial material from the substrate while forming an etch crevice therebetween and bending the support handle to form compression in the epitaxial material during the etching process.

2. The method of claim 1 , wherein the wax film comprises wax which has a softening point temperature within a range from about 65° C. to about 95° C.

3. The method of claim 1 , wherein the sacrificial layer is exposed to a wet etch solution during the etching process, the wet etch solution comprises hydrofluoric acid, a surfactant, and a buffer.

4. The method of claim 1 , wherein the sacrificial layer is exposed to hydrogen fluoride vapor during the etching process.

5. The method of claim 1 , wherein the epitaxial material comprises a material selected from the group consisting of gallium arsenide, aluminum gallium arsenide, indium gallium phosphide, alloys thereof, derivatives thereof, and combinations thereof.

6. The method of claim 1 , wherein the epitaxial material comprises a cell structure containing multiple layers comprising at least one material selected from the group consisting of gallium arsenide, n-doped gallium arsenide, p-doped gallium arsenide, aluminum gallium arsenide, n-doped aluminum gallium arsenide, p-doped aluminum gallium arsenide, indium gallium phosphide, alloys thereof, derivatives thereof, and combinations thereof.

7. The method of claim 1 , wherein the sacrificial layer comprises a material selected from the group consisting of aluminum arsenide, alloys thereof, derivatives thereof, and combinations thereof.

8. The method of claim 1 , wherein the substrate comprises gallium arsenide, n-doped gallium arsenide, p-doped gallium arsenide, or derivatives thereof.

9. A method for forming a thin film material for at least one of a solar device, a semiconductor device, and an electronic device during an epitaxial lift off process, comprising:

positioning a substrate comprising an epitaxial material disposed over a sacrificial layer on the substrate;

adhering a support handle onto the epitaxial material, wherein the support handle comprises a wax film having a varying thickness, and wherein the thickness varies linearly; and

removing the sacrificial layer during an etching process, wherein the etching process further comprises:

peeling the epitaxial material from the substrate;

forming an etch crevice between the epitaxial material from the substrate; and

bending the support handle to form compression in the epitaxial material during the etching process.

10. The method of claim 1 , wherein the varying thickness of the wax film is thinnest near a middle of the wax film.

11. The method of claim 1 , wherein the varying thickness of the wax film is thickest near a middle of the wax film.

12. The method of claim 9 , wherein the varying thickness of the wax film is thinnest near a middle of the wax film.

13. The method of claim 9 , wherein the varying thickness of the wax film is thickest near a middle of the wax film.

Assignments (10)