Providing variable cell density and sizes in a radiation detector
View Patent ↗An apparatus and method to decrease light saturation in a photosensor array and increase detection efficiency uses a light distribution profile from a scintillator-photodetector geometry to configure the photosensor array to have a non-uniform sensor cell pattern, with varying cell density and/or varying cell size and shape. A solid-state photosensor such as a SiPM sensor having such a non-uniform cell structure realizes improved energy resolution, higher efficiency and increased signal linearity. In addition the non-uniform sensor cell array can have improved timing resolution due to improvements in statistical fluctuations. A particular embodiment for such photosensors is in PET medical imaging.
1. A solid-state photosensor comprising:
an array of sensor cells arranged in a pattern, wherein:
the pattern is associated with a predeteiwined light distribution profile, wherein
the plurality of sensor cells vary in at least one of size, density, and spacing between cells so as to minimize signal saturation of any one cell and;
a plurality of quenching resistors, wherein each quenching resistor in the plurality of quenching resistors is associated with a sensor cell in the plurality of sensor cells.
2. The solid-state photosensor of claim 1 , wherein the solid-state photosensor comprises a silicon photomultiplier (SiPM).
3. The solid state photosensor of claim 2 , wherein said SiPM is configured as a 2×2 block, and each sensor in the block has an identical cell pattern.
4. The PET imaging apparatus of claim 3 , wherein said SiPM is configured as a 2×2 block, and each sensor in the block has an identical cell pattern.
5. The solid state photosensor of claim 1 , wherein the solid-state photosensor comprises an avalanche photodiode (APD) sensor.
6. The solid state photosensor of claim 5 , wherein adjacent sensors in the block are oriented at a 90 degree angle with respect to each other.
7. The solid state photosensor of claim 1 , where each quenching resistor is varied according to cell size.
8. The solid state photosensor of claim 1 , where each quenching resistor has a parasitic capacitance which is varied according to cell size.
9. The solid state photosensor of claim 1 , where each cell has an additional physical capacitance which is varied according to cell size.
10. The PET imaging apparatus of claim 9 , wherein said plurality of solid-state photosensors comprise silicon photomultipliers (SiPM).
11. The PET imaging apparatus of claim 9 , wherein said plurality of solid-state photosensors comprise avalanche photodiode (APD) sensors.
12. The PET imaging apparatus of claim 9 , wherein cells at a center portion of said array are larger than cells at outer portions of said array.
13. The PET imaging apparatus of claim 9 , wherein at least one cell of said array is rectangular, and least one other cell of said array is square.
14. The solid state photosensor of claim 1 , wherein cells at a center portion of said array are larger than cells at outer portions of said array.
15. The solid state photosensor of claim 1 , wherein at least one cell of said array is rectangular, and least one other cell of said array is square.
16. The PET imaging apparatus of claim 15 , wherein adjacent sensors in the block are oriented at a 90 degree angle with respect to each other.
17. A PET imaging apparatus comprising:
a PET detector assembly including a plurality of solid-state photosensors, wherein at least one of said plurality of photosensors comprises an array of sensor cells arranged in a pattern, wherein:
the pattern is associated with a predetermined light distribution profile, wherein
the plurality of sensor cells vary in at least one of size, density, and spacing between cells so as to minimize signal saturation of any one cell and;
a plurality of quenching resistors, wherein each quenching resistor in the plurality of quenching resistors is associated with a sensor cell in the plurality of sensor cells.
18. The PET imaging apparatus of claim 17 , where each quenching resistor is varied according to cell size.
19. The PET imaging apparatus of claim 17 , where each quenching resistor has a parasitic capacitance which is varied according to cell size.
20. The PET imaging apparatus of claim 17 , where each cell has an additional physical capacitance which is varied according to cell size.
21. A solid-state photosensor comprising:
an array of sensor cells arranged in a non-uniform pattern, wherein:
the pattern is configured based on a predetermined non-uniform light distribution profile wherein
the array of sensor cells vary in at least one of size, density, and spacing between cells so as to minimize signal saturation of any one cell and
a plurality of quenching resistors, wherein each quenching resistor in the plurality of quenching resistors is associated with a sensor cell in the array of sensor cells.