Semiconductor devices and methods of manufacture thereof
View Patent ↗Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device includes a workpiece and a plurality of first conductive lines disposed over the workpiece in a metallization layer. A plurality of second conductive lines is disposed over the workpiece in the metallization layer. The plurality of second conductive lines comprises a greater vertical height in a cross-sectional view of the workpiece than a vertical height of the plurality of first conductive lines.
1. A semiconductor device, comprising:
a workpiece;
a plurality of first conductive lines disposed over the workpiece in a metallization layer;
a plurality of second conductive lines disposed over the workpiece in the metallization layer, wherein the plurality of second conductive lines comprise a greater vertical height in a cross-sectional view of the workpiece than a vertical height of the plurality of first conductive lines; and
wherein the plurality of first conductive lines comprise a first horizontal width in the cross-sectional view of the workpiece, wherein the plurality of second conductive lines comprise a second horizontal width in the cross-sectional view of the workpiece, and wherein the second horizontal width is less than the first horizontal width.
2. The semiconductor device according to claim 1 , wherein one of the plurality of second conductive lines is disposed between two of the plurality of first conductive lines.
3. The semiconductor device according to claim 1 , wherein the second conductive lines are located at edges of the semiconductor device or at edges of a region of the semiconductor device and the first conductive lines are located in central regions between the second conductive lines, or wherein the first conductive lines are located at edges of the semiconductor device or at edges of a region of the semiconductor device and the second conductive lines are located in central regions between the first conductive lines.
4. The semiconductor device according to claim 1 , wherein the plurality of second conductive lines comprises power rails.
5. The semiconductor device according to claim 1 , wherein the plurality of first conductive lines comprises conductive lines for standard cells.
6. The semiconductor device according to claim 1 , wherein the second horizontal width is about one-third to one-half of the first horizontal width.
7. A semiconductor device, comprising:
a workpiece;
a plurality of first conductive lines disposed over the workpiece in a metallization layer, the plurality of first conductive lines comprising a first vertical height in a cross-sectional view of the workpiece;
a plurality of second conductive lines disposed over the workpiece in the metallization layer, the plurality of second conductive lines comprising a second vertical height in the cross-sectional view of the workpiece, wherein the second vertical height is greater than the first vertical height; and
wherein the metallization layer comprises a first metallization layer, wherein a portion of the plurality of second conductive lines is disposed in a second metallization layer adjacent the first metallization layer, the second metallization layer being vertically above or vertically below the first metallization layer.
8. The semiconductor device according to claim 7 , wherein the second vertical height is about 1.5 to 3 times greater than the first vertical height.
9. The semiconductor device according to claim 7 , wherein the plurality of second conductive lines comprise a lower resistance than the plurality of first conductive lines.
10. The semiconductor device according to claim 7 , wherein the plurality of first conductive lines and the plurality of second conductive lines are disposed within an insulating material.
11. The semiconductor device according to claim 10 , wherein the insulating material includes an etch stop layer formed therein, wherein a bottom surface of the plurality of second conductive lines is adjacent a top surface of the etch stop layer.
12. A semiconductor device, comprising:
a substrate;
a dielectric layer on a major surface of the substrate;
a plurality of first conductive lines disposed within the dielectric layer, the plurality of first conductive lines having a first thickness in a direction perpendicular to the major surface;
a plurality of second conductive lines disposed within the dielectric layer and on a same horizontal plane, relative the major surface, as the plurality of first conductive lines, the plurality of second conductive lines having a second thickness in the direction perpendicular to the major surface, the second thickness being greater than the first thickness; and
wherein the plurality of first conductive lines comprise a first horizontal width in a cross-sectional view of the workpiece, wherein the plurality of second conductive lines comprise a second horizontal width in the cross-sectional view of the workpiece, and wherein the second horizontal width is less than the first horizontal width.
13. The semiconductor device according to claim 12 , wherein the substrate is selected from the group consisting of silicon, silicon-on-insulator, germanium-on-insulator, and a compound semiconductor.
14. The semiconductor device according to claim 12 , wherein one of the plurality of first conductive lines and the plurality of second conductive lines is located at edges of the semiconductor device or at edges of a region of the semiconductor device and the other of the plurality of first conductive lines and plurality of second conductive lines is located in a central region within the edges of the semiconductor device or region.
15. The semiconductor device according to claim 12 , wherein the plurality of second conductive lines comprises power rails, and the plurality of first conductive lines comprises conductive lines for standard cells.
16. The semiconductor device according to claim 12 , wherein the plurality of first conductive lines comprises a barrier layer and a conductor layer.
17. The semiconductor device according to claim 12 , wherein the dielectric layer includes an etch stop layer, and wherein a bottom surface of the plurality of second conductive lines is adjacent a top surface of the etch stop layer.
18. The semiconductor device of claim 1 , wherein each one of the plurality of first conductive lines comprises a first area in the cross-sectional view of the workpiece, each one of the second conductive lines has a second area in the cross-section view of the workpiece, and wherein the first area is equal to the second area.
19. The semiconductor device of claim 7 , wherein the plurality of first conductive lines comprise a first horizontal width in the cross-sectional view of the workpiece, wherein the plurality of second conductive lines comprise a second horizontal width in the cross-sectional view of the workpiece, and wherein the second horizontal width is less than the first horizontal width.
20. The semiconductor device of claim 12 wherein each one of the plurality of first conductive lines comprises a first area in the cross-sectional view of the workpiece, each one of the second conductive lines has a second area in the cross-section view of the workpiece, and wherein the first area is equal to the second area.