IP Library Granted Patent US 9,224,626
Granted Patent B2
US 9,224,626 · App. 13/541,006 · Granted Dec 29, 2015

Composite substrate for layered heaters

Inventors: Jacob R. Lindley (St. Louis, MO); Dean J. Meyer (Columbia, MO); Alexander D. Glew (Mountain View, CA)
Assignee: Watlow Electric Manufacturing Company
H01L21/67103H05B3/14H05B3/28H05B2203/017Y10T29/49083
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,224,626
App. No.
13/541,006
Granted
Dec 29, 2015
Kind
B2
Abstract

A method of forming a heater assembly for use in semiconductor processing includes thermally securing a heater substrate to an application substrate; and applying a layered heater to the heater substrate after the heater substrate is secured to the application substrate. The application of the layered heater includes applying a first dielectric layer onto the heater substrate, applying a resistive heating layer onto the first dielectric layer, and applying a second dielectric layer onto the resistive heating layer. The heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of at least one of the first dielectric layer and a coefficient of thermal expansion of the resistive heating layer.

Claims (25)

1. A method of forming a heater assembly for use in semiconductor processing comprising the following steps in sequence:

thermally securing a heater substrate to an application substrate using a joining process selected from the group consisting of brazing, welding, soldering, diffusion bonding, epoxying, and vulcanizing;

applying a layered heater to the heater substrate after the heater substrate is secured to the application substrate, the application of the layered heater comprising:

applying a first dielectric layer onto the heater substrate;

applying a resistive heating layer onto the first dielectric layer; and

applying a second dielectric layer onto the resistive heating layer,

wherein the heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of at least one of the first dielectric layer and a coefficient of thermal expansion of the resistive heating layer.

2. The method according to claim 1 , wherein the heater substrate is brazed to the application substrate.

3. The method according to claim 2 , wherein a silver brazing material is used.

4. The method according to claim 1 , wherein each of the layers of the layered heater are applied by a thermal spray process.

5. The method according to claim 4 , wherein a circuit pattern is formed in the resistive heating layer by a laser removal process.

6. The method according to claim 1 , wherein the first dielectric layer is an alumina material, the heater substrate is a molybdenum material, and the application substrate is an austenitic stainless steel material.

7. The method according to claim 1 further comprising applying a bond coat layer to the heater substrate prior to applying the first dielectric layer.

8. The method according to claim 1 further comprising applying a topcoat layer over the second dielectric layer and subsequently removing portions of the topcoat with a process to achieve a predetermined surface flatness.

9. A method of forming a heater assembly for use in semiconductor processing comprising the following steps in sequence:

brazing a heater substrate to an application substrate;

applying a layered heater to the heater substrate after the heater substrate is secured to the application substrate, the application of the layered heater comprising:

applying a bond coat layer by a thermal spray process onto the heater substrate;

applying a first dielectric layer by a thermal spray process onto the bond coat layer;

applying a resistive heating layer by a thermal spray process onto the first dielectric layer; and

applying a second dielectric layer by a thermal spray process onto the resistive heating layer,

wherein the heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of at least one of the first dielectric layer and a coefficient of thermal expansion of the resistive heating layer.

10. The method according to claim 9 , wherein a silver brazing material is used.

11. The method according to claim 9 , wherein a circuit pattern is formed in the resistive heating layer by a laser removal process.

12. The method according to claim 9 , wherein the first dielectric layer is an alumina material, the heater substrate is a molybdenum material, and the application substrate is an austenitic stainless steel material.

Assignments (2)
PATENT SECURITY AGREEMENT (SHORT FORM) Recorded Mar 3, 2021
From: WATLOW ELECTRIC MANUFACTURING COMPANY
To: BANK OF MONTREAL, AS ADMINISTRATIVE AGENT
Reel/Frame 055479/0708 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 3, 2012
From: LINDLEY, JACOB R.; MEYER, DEAN J.; GLEW, ALEXANDER D.
To: WATLOW ELECTRIC MANUFACTURING COMPANY
Reel/Frame 028715/0533 →
Continuity (1)
Related Publication 20140007416A1 · Jan 9, 2014