Organic electroluminescence generating devices

1. An electroluminescence generating device comprising:

a. a channel comprising at least one layer of an organic semiconductor material, said organic semiconductor material being a polycrystalline semiconductor-material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes, said channel being realized by one layer of organic semiconductor or by several coplanar layers of organic semiconductors;

b. an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said electron electrode being able to inject electrons in said channel layer;

c. a hole electrode, said hole electrode being spaced apart from said electron electrode, said hole electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said hole electrode being able to inject holes in said channel, said electron electrode and said hole electrode being positioned in an horizontal plane along said channel;

d. a control electrode positioned on said first side or on a second side of said channel, said control electrode being suitable for controlling the charge injection, the current flow and the charge recombination between the electron electrode and the hole electrode;

whereby said electroluminescence generating device being able to emit light by applying an electrical potential difference between said electron electrode and said hole electrode, characterized in that at least one of said electron electrode and said hole electrode comprise at least one different material which is not comprised in the other one.

2. Device according to claim 1 , further comprising a dielectric layer between said channel and said control electrode.

3. Device according to claim 2 , wherein said dielectric layer comprises at least one material selected from the group consisting of silicon oxide, alumina, polyimide and polymethylmethacrylate.

4. Device according to claim 1 , wherein said electron electrode comprises one or more elements selected from the group consisting of Au, Ca, Mg, Al, In, Perovskite Manganites.

5. Device according to claim 1 , wherein said hole electrode comprises at least one material selected from the group consisting of Au, indium tin oxide, Cr, Cu, Fe, Ag, poly(3,4-ethylendioxythiophene) combined with poly(styrene sulfonate), Perovskite Manganites.

6. Device according to claim 1 , wherein said channel comprises at least one material selected from the group consisting of small molecule materials, polymers and metal complexes.

7. Device according to claim 6 , wherein said channel comprises at least one material selected from the group consisting of tetracene, pentacene, perylenes, terthiophene, tetrathiophene, quinquethiophene, sexithiophene, bora-diazaindacene, polyphenylenevinylene, polyfluorene, polythiophene and porphyrins.

8. Device according to claim 1 , wherein said poly-crystalline semiconductor material has a crystal grain size and said hole electrode and said electron electrode are spaced apart at a distance smaller than said crystal grain size.

9. Device according to claim 1 , wherein said hole electrode and said electron electrode are spaced apart at a distance between 5 nm and 5 microns.

10. Device according to claim 1 , wherein said electron electrode and said hole electrode have digitated structures comprising a regular repetition of a basic finger structure, and are positioned such that said basic finger structures of said basic finger structures of respectively hole and electron electrodes are alternating each other, and is characterised by two in-plane distances P and R between the basic finger structures.

11. Device according to claim 10 wherein said P and R are equal.

12. Device according to claim 1 , wherein said control electrode is an injection control electrode, said injection control electrode being positioned on said second side of said channel whereby being suitable to facilitate the injection of charge carriers into said channel upon the application of an electrical potential difference between said control electrode and said hole electrode or an electron electrode.

13. Device according to claim 1 , wherein said control electrode is a current control electrode, said current control electrode being positioned on said second side of said channel whereby being suitable for controlling the current of at least one type of charge carriers upon the application of an electrical potential difference between said control electrode and said electron and/or hole electrode.

14. Device according to claim 1 , wherein said channel is realized by several coplanar layers of organic semiconductors.

15. Device according to claim 1 , further comprising optical confinement and/or waveguiding layers on said first and/or second side of said channel.

16. Device according to claim 1 , further comprising optical resonating structures or cavities on said first and/or second side of said channel.

17. Device according to claim 1 , further comprising a flexible or rigid substrate.

18. A method for generating electroluminescence using a device according to claim 1 , by recombination of electrons and holes injected in said channel from said electron electrode and hole electrode.

19. Device according to claim 1 , comprising at least two control electrodes.